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Conference Proceedings

1. Comparison of partially and fully depleted SOI transistors down to the sub 50-nm-gate length regime

Dreeskornfeld, L. ; Hartwich, J. ; Landgraf, E. ; Luyken, R.J. ; Roesner, W. ; Schulz, T. ; Staedele, M. ; Schmitt-Landsiedel, D. ; Risch, L.

Pub. info.:	Silicon-on-insulator technology and devices XI : proceedings of the international symposium. pp.361-366, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-5

Conference Proceedings

2. Fabrication of Ultrashort Vertical MOS-Transistors

Aeugle, T. ; Risch, L. ; Roesner, W. ; Schaefer, H. ; Franosch, M. ; Eller, M. ; Ramcke, T.

Pub. info.:	ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology. pp.561-570, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-3

Conference Proceedings

3. How small can MOSFETs get? (Invited Paper)

Risch, L.

Pub. info.:	Advances in microelectronic device technology : 7-9 November 2001, Nanjing, China. pp.1-9, 2001. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4600

Conference Proceedings

4. Perspectives for Ultra High Density Nonvolatile Data Storage (Invited paper)

Specht, M. ; Dorna, U. ; Hofinann, F. ; Dreeskornfeld, L. ; Kretz, J. ; Stadele, M. ; Wilier, J. ; Rosner, W. ; Risch, L.

Pub. info.:	ULSI Process Integration : proceedings of the International Symposium. pp.296-305, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-06