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10 results

Conference Proceedings

1. SHALLOW OHMIC CONTACTS TO p-InGaAs BASED ON Pd/Ge WITH IMPLANTED Zn OR Cd

Ressel, P. ; Strusny, H. ; Fritzsche, D. ; Krautle, H. ; Mause, K.

Pub. info.:	Interface control of electrical, chemical, and mechanical properties : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A.. pp.177-, 1994. Pittsburgh. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	318

Conference Proceedings

2. The Stability of Aging of Pd/Zn and Pt-Based Ohmic Contacts to p-InGaAs/InP

Leech, P. W. ; Reeves, G. K. ; Ressel, P.

Pub. info.:	Advanced interconnects and contact materials and processes for future integrated circuits : symposium held April 13-16, 1998, San Francisco, California, U.S.A.. pp.441-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	514

Conference Proceedings

3. Shallow and Low-Resistive Ohmic Contacts to p-In0.53Ga0.47As Based on Pd/Au and Pd/Sb Metallizations

Ressel, P. ; Wang, L. C. ; Park, M. H. ; Leech, P. W. ; Reeves, G. K. ; Kuphal, E.

Pub. info.:	Advanced metallization for future ULSI : symposium held April 8-11, 1996, San Francisco, California, U.S.A.. pp.577-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	427

Conference Proceedings

4. Thermal Stability in Pd-Based Contacts to p-Type In0.53Ga0.47 As Characterized by RBS

Leech, P. W. ; Ressel, P. ; Reeves, G. K. ; Zhou, W. ; Kuphal, E.

Pub. info.:	Diagnostic techniques for semiconductor materials processing II : symposium held November 27-30, 1995, Boston, Massachusetts, U.S.A.. pp.419-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	406

Conference Proceedings

5. The Role of Ru in Ohmic Contacts to InP

Barnard, W.O. ; Myburg, G. ; Auret, F.D. ; Ressel, P. ; Kuphal, E.

Pub. info.:	Proceedings of the Symposium on Nondestructive Wafer Characterization for Compound Semiconductor Materials and the twenty-second State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXII). pp.305-316, 1995. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	95-6

Conference Proceedings

6. Design and realization of high-power DFB lasers (Invited Paper)

Wenzel, H. ; Klehr, A. ; Braun, M. ; Bugge, F. ; Erbert, G. ; Fricke, J. ; Knauer, A. ; Ressel, P. ; Sumpf, B. ; Weyers, M. ; Trankle, G.

Pub. info.:	Physics and Applications of Optoelectronic Devices. pp.110-123, 2004. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5594

Conference Proceedings

7. High-power ridge-wavequide and broad-area lasers with a DFB resonator in the wavelength range 760, to 790-nm

Klehr, A. ; Braun, M. ; Bugge, F. ; Erbert, G. ; Fricke, J. ; Knauer, A. ; Ressel, P. ; Wenzel, H. ; Trankle, G.

Pub. info.:	Novel In-Plane Semiconductor Lasers IV. pp.416-425, 2005. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5738

Conference Proceedings

8. 3-W high-brightness tapered diode lasers at 735 nm based on tensile-strained GaAsP QWs (Invited Paper)

Erbert, G. ; Fricke, J. ; Huelsewede, R. ; Knauer, A. ; Pittroff, W. ; Ressel, P. ; Sebastian, J. ; Sumpf, B. ; Wenzel, H. ; Traenkle, G.

Pub. info.:	Novel In-Plane Semiconductor Lasers II. pp.29-38, 2003. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4995

Conference Proceedings

9. Highly efficient 650 nm laser bars with an output power of about 10 Wand a wall-plug efficiency of 30% [6133-14]

Sumpf, B. ; Zorn, M. ; Staske, R. ; Fricke, J. ; Ressel, P. ; Erbert, G. ; Weyers, M. ; Trankle G

Pub. info.:	Novel In-Plane Semiconductor Lasers V. pp.61330D-, 2006. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	6133

10.

Conference Proceedings

10. High power broad area 808 nm DFB lasers for pumping solid state lasers [6133-16]

Klehr, A. ; Bugge, F. ; Erbert, G. ; Fricke, J. ; Knauer, A. ; Ressel, P. ; Wenzel, H. ; Trenkle, G.

Pub. info.:	Novel In-Plane Semiconductor Lasers V. pp.61330F-, 2006. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	6133

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