Edge and Floating Body Effects on Hot-Carrier-Induced Degradation in FD SOT n-MOSFETs

Edge and Floating Body Effects on Hot-Carrier-Induced Degradation in FD SOT n-MOSFETs

Author(s):

Renn, S H ( (LPCS(UMR CNRS/INPG)) )
Szelag, B ( (LPCS(UMR CNRS/INPG)) )
Balestra, F ( (LPCS(UMR CNRS/INPG)) )
Raynaud, C ( (LETI (CEAJCENG)) )

Publication title:

Proceedings of the Ninth International Symposium on Silicon-on-Insulator Technology and Devices

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

99-3

Pub. Year:

1999

Page(from):

276

Page(to):

281

Pages:

6

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566772259 [1566772257]

Language:

English

Call no.:

E23400/99-3

Type:

Conference Proceedings

Details

TDL ID:	ZA00013933
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
Conf. info. (Number):	9th ; 195th
Conf. info. (Venue):	Seattle, WA, USA
Conf. info. (Date):	1999.05.02-1999.05.07

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