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21 results

Conference Proceedings

1. X-RAY DIFFRACTION DETERMINATION OF INTERFACE ROUGHNESS IN GaAs/AlxGa1-xAs MULTILAYERS

Nayak, S. ; Redwing, J. M. ; Kuech, T. F. ; Phang, Y. -H. ; Savage, D. E. ; Lagally, M. G.

Pub. info.:	Common themes and mechanisms of epitaxial growth : symposium held April 13-15, 1993, San Francisco, California, U.S.A.. pp.137-, 1993. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	312

Conference Proceedings

2. Comparative study of GaN growth process by MOVPE

Sun, J. ; Redwing, J. M. ; Kuech, T. F.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.463-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

3. INFLUENCE OF IMPURITIES ON MECHANISMS OF GROWTH IN MOVPE GaAs

Nayak, S. ; Redwing, J. M. ; Huang, J. W. ; Lagally, M. G. ; Kuech, T. F.

Pub. info.:	Fractal aspects of materials : symposium held November 28-December 1, 1994, Boston, Massachusetts, U.S.A.. pp.293-, 1995. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	367

Conference Proceedings

4. INTERFACIAL ROUGHNESS IN GaAs/AlGaAs MULTILAYERS: INFLUENCE OF CONTROLLED IMPURITY ADDITION

Nayak, S. ; Redwing, J. M. ; Kuech, T. F. ; Savage, D. E. ; Lagally, M. G.

Pub. info.:	Determining nanoscale physical properties of materials by microscopy and spectroscopy. pp.249-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	332

Conference Proceedings

5. Luminescence Properties of Si-Doped GaN and Evidence of Compensating Defects as the Origin of the Yellow Luminescence

Goepfert, I. D. ; Schubert, E. F. ; Redwing, J. M.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.679-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

6. STUDY OF SILICON INCORPORATION IN GaAs MOVPE LAYERS GROWN WITH TERTIARYBUTYLARSINE

Redwing, J. M. ; Kuech, T. F. ; Simka, H. ; Jensen, K. F.

Pub. info.:	Gas-phase and surface chemistry in electronic materials processing : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.. pp.201-, 1994. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	334

Conference Proceedings

7. MOVPE Growth of High Electron Mobility AlGaN/GaN Heterostructures

Redwing, J. M. ; Flynn, J. S. ; Tischler, M. A. ; Mitchel, W. ; Saxler, A.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.201-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

Conference Proceedings

8. Intrinsic Mobility Limits of a Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures

Walukiewicz, W. ; Hsu, L. ; Redwing, J. M.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.573-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

9. MOVPE GaN Gas-Phase Chemistry for Reactor Design and Optimization

Safvi, S. A. ; Redwing, J. M. ; Thon, A. ; Flynn, J. S. ; Tischler, M. A. ; Kuech, T. F.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.101-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

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Conference Proceedings

10. Deep Levels in High Resistivity AlGaN Films Grown by MOCVD

Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Redwing, J. M.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.239-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

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