1.

Conference Proceedings
Conference Proceedings
1. Detailed Microscopic Defect Identification in GaAs
Gebauer, J. ; Staab, T.E.M. ; Redmann, F. ; Krause-Rehberg, R.
Pub. info.: Positron annihilation, ICPA-12 : Proceedings of the 12th International Conference on Positron Annihilation, August 6-12, 2000, München, Germany.  pp.76-78,  2001.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 363-365
2.

Conference Proceedings
Conference Proceedings
2. Formation of Vacancy Clusters During Copper Diffusion in Semiinsulating GaAs
Petters, K. ; Gebauer, J. ; Redmann, F. ; Leipner, H.S. ; Krause-Rehberg, R.
Pub. info.: Positron annihilation, ICPA-12 : Proceedings of the 12th International Conference on Positron Annihilation, August 6-12, 2000, München, Germany.  pp.111-113,  2001.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 363-365
3.

Conference Proceedings
Conference Proceedings
3. Effects of Illumination on Positron Lifetime of Electron Irradiated n-type 6H-SiC
Redmann, F. ; Kawasuso, A. ; Petters, K. ; Krause-Rehberg, R. ; Itoh, H.
Pub. info.: Positron annihilation, ICPA-12 : Proceedings of the 12th International Conference on Positron Annihilation, August 6-12, 2000, München, Germany.  pp.126-128,  2001.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 363-365
4.

Conference Proceedings
Conference Proceedings
4. Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy
Kawasuso, A. ; Weidner, M. ; Redmann, F. ; Frank, T. ; Krause-Rehberg, R. ; Pensl, G. ; Sperr, P. ; Triftshauser, W. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.489-492,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Positron Beam Studies of Defects in Semiconductors
Krause-Rehberg, R. ; Borner, F. ; Redmann, F.
Pub. info.: Positron annihilation, ICPA-12 : Proceedings of the 12th International Conference on Positron Annihilation, August 6-12, 2000, München, Germany.  pp.404-408,  2001.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 363-365
6.

Conference Proceedings
Conference Proceedings
6. Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study
Kawasuso, A. ; Redmann, F. ; Krause-Rehberg, R. ; Sperr, P. ; Frank, T. ; Weidner, M. ; Pensl, G. ; Itoh, H.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.537-542,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
7.

Conference Proceedings
Conference Proceedings
7. Vacancy Formation in GaAs under Different Equilibrium Conditions
Bondarenko, V. ; Gebauer, J. ; Redmann, F. ; Krause-Rehberg, R.
Pub. info.: Positron annihilation ICPA-13 : proceedings of the 13th International Conference on Positron Annihilation, Kyoto, Japan, September 2003.  pp.54-56,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 445-446
8.

Conference Proceedings
Conference Proceedings
8. Polytype-Dependent Vacancy Annealing Studied by Positron Annihilation
Kawasuso, A. ; Yoshikawa, M. ; Maekawa, M. ; Itoh, H. ; Chiba, T. ; Redmann, F. ; Krause-Rehberg, R. ; Weidner, M. ; Frank, T. ; Pensl, G.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.477-480,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
9.

Conference Proceedings
Conference Proceedings
9. Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy
Kawasuso, A. ; Weidner, M. ; Redmann, F. ; Frank, T. ; Krause-Rehberg, R. ; Pensl, G. ; Sperr, P. ; Triftshauser, W. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.489-492,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393