1.

Conference Proceedings
Conference Proceedings
1. Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC
Weingaertner, R. ; Bickermann, M. ; Hofmann, D. ; Rasp, M. ; Straubinger, T.L. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.397-400,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
2.

Conference Proceedings
Conference Proceedings
2. Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method
Straubinger, T.L. ; Bickermann, M. ; Rasp, M. ; Weingartner, R. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.131-134,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions
Schmitt, E. ; Rasp, M. ; Weber, A.-D. ; Koelbl, M. ; Eckstein, R. ; Kadinski, L. ; Selder, M.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.15-20,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
4.

Conference Proceedings
Conference Proceedings
4. Study of Boron Incorporation During PVT Growth of p-type SiC Crystals
Bickermann, M. ; Hofmann, D. ; Rasp, M. ; Straubinger, T.L. ; Weingaertner, R. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.49-52,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
5.

Conference Proceedings
Conference Proceedings
5. Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth Method
Straubinger, T.L. ; Bickermann, M. ; Rasp, M. ; Weingartner, R. ; Wellmann, P.J. ; Winnacker, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.131-134,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. PVT Growth of p-Type and Semi-Insulating 2-Inch 6H-SiC Crystals
Rasp, M. ; Straubinger, T.L. ; Schmitt, E. ; Bickermann, M. ; Reshanov, S. ; Sadowski, H.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.55-58,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436