1.

Conference Proceedings
Conference Proceedings
1. Material, Process, and Device Development of GaN-Based HFETs on Silicon Substrates
Johnson, J. W. ; Gao, J. ; Lucht, K. ; Williamson, J. ; Strautin, C. ; Riddle, J. ; Therrien, R. ; Rajagopal, P. ; Roberts, J.C. ; Vescan, A. ; Brown, J.D. ; Hanson, A. ; Singhal, S. ; Borges, R. ; Finer, E.L. ; Linthicum, K.J.
Pub. info.: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia.  pp.405-419,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-06
2.

Conference Proceedings
Conference Proceedings
2. *Pendeo-epitaxial growth and characterization of GaN and related materials on 6H-SiC(0001) and Si(111) substrates
Davis, R. F. ; Gehrke, T. ; Linthicum, K. J. ; Zheleva, T. S. ; Rajagopal, P. ; Zorman, C. A. ; Mehregany, M.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W2.1.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
3.

Conference Proceedings
Conference Proceedings
3. Photoluminescence characterization of Mg implanted GaN
Ronning, C. ; Hofsass, H. C. ; Stotzler, A. ; Deicher, M. ; Carlson, E. P. ; Hartlieb, P. J. ; Gehrke, T. ; Rajagopal, P. ; Davis, R. F.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.44.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
4.

Conference Proceedings
Conference Proceedings
4. Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
Gehrke, T. ; Linthicum, K. J. ; Thomson, D. B. ; Rajagopal, P. ; Batchelor, A. D. ; Davis, R. F.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.2.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
5.

Conference Proceedings
Conference Proceedings
5. Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy
Thomson, D. B. ; Gehrke, T. ; Linthicum, K. J. ; Rajagopal, P. ; Davis, R. F.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.37.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
6.

Conference Proceedings
Conference Proceedings
6. Growth and Characterization of GaN and AlxGa1-xN Thin Films Achieved Via Lateral- and /or Pendeo-Epitaxial Overgrowth on 6H-SiC(0001) Substrates
Davis, R. F. ; Nam, O-H. ; Zheleva, T. S. ; Bremser, M. D. ; Linthicum, K. J. ; Gehrke, T. ; Rajagopal, P. ; Thomson, D. B. ; Carlson, E. P.
Pub. info.: III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A..  pp.91-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 535
7.

Conference Proceedings
Conference Proceedings
7. Pendeo-Epitaxy-A New Approach for Lateral Growth of Gallium Nitride Structures
Zheleva, T. S. ; Smith, S. A. ; Thomson, D. B. ; Gehrke, T. ; Linthicum, K. J. ; Rajagopal, P. ; Carlson, E. ; Ashmawi, W. M. ; Davis, R. F.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.38.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
8.

Conference Proceedings
Conference Proceedings
8. Thermal Conductivity of GaN Grown on Silicon Substrates
Mion, C. ; Chang, Y.C. ; Muth, J.F. ; Rajagopal, P. ; Brown, J.D.
Pub. info.: GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.381-386,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 798
9.

Conference Proceedings
Conference Proceedings
9. AIGaN/GaN Heterostructure Field Effect Transistors Fabricated on 100mm Si/Poly Sic Composite Substrates
Roberts, J.C. ; Rajagopal, P. ; Cook, J.W.Jr. ; Therrien, R.J. ; Piner, E.L. ; Linthicum, K.J. ; Hobart, K.D. ; Twigg, M. ; Mittereder, J. ; Binari, S. ; Kub, F.J.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.151-156,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-02
10.

Conference Proceedings
Conference Proceedings
10. Lateral- and Pendeo-epitaxial Growth and Defect Reduction in GaN Thin Films
Davis, R. F. ; Nam, O. -H. ; Zheleva, T. S. ; Gehrke, T. ; Linthicum, K. J. ; Rajagopal, P.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1471-1476,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)