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THE EFFECT OF HYDROGEN TREATMENT ON ELECTRICAL PROPERTIES OF A1GaAsSb

Author(s):
Polyakov, A. Y.
Stam, M.
Milnes, A. G.
Wilson, R. G.
Bochkarev, A. E.
Raichoudhyry, P.
Hillard, R. J.
Pearton, S. J,.
3 more
Publication title:
Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
262
Pub. Year:
1992
Page(from):
425
Page(to):
430
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558991576 [1558991573]
Language:
English
Call no.:
M23500/262
Type:
Conference Proceedings

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