1.

Conference Proceedings
Conference Proceedings
1. DIRECT OBSERVATION OF MEDIUM FIELD BREAKDOWN ORIGIN ON MOS CAPACITORS CONTAINING GROWN-IN CZ CRYSTAL DEFECTS
Tamatsuka, M. ; Radzimski, Z. ; Rozgonyi, G.A. ; Oka, S. ; Kato, M. ; Kitagawara, Y.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.1593-1609,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(2)
2.

Conference Proceedings
Conference Proceedings
2. ELECTRICAL CHARACTERIZATION OF SILICON WITH BURIED DEFECTS
Honeycutt, J. ; Radzimski, Z. ; Kola, R. R. ; Salih, A. S. M. ; Rozgonyi, G. A.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.121-124,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
3.

Conference Proceedings
Conference Proceedings
3. Secondary Defect Formation and Gettering in MeV Self-Implanted Silicon
Brown, R. A. ; Kononchuk, O. ; Radzimski, Z. ; Rozgonyi, G. A. ; Gonzalez, F.
Pub. info.: Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.155-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 438
4.

Conference Proceedings
Conference Proceedings
4. Secondary Defect Formation and Gettering in MeV Self-Implanted Silicon
Brown, R. A. ; Kononchuk, O. ; Radzimski, Z. ; Rozgonyi, G. A. ; Gonzalez, F.
Pub. info.: Microstructure evolution during irradiation : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A..  pp.155-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 439
5.

Conference Proceedings
Conference Proceedings
5. Degradation of Gate Oxide Integrity due to Ni and Cu Contamination and Impurity Gettering in Epitaxial Si Wafers
Koveshnikov, S. ; Beauchaine, D. ; Radzimski, Z. ; Higgs, V.
Pub. info.: The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000.  pp.387-398,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-2