1.

Conference Proceedings
Conference Proceedings
1. The Profile Control of n-type Doping in Low and High Temperature Si Epitaxy for High Frequency Bipolar Transistors
Radamson, H.H. ; Mohadjeri, B. ; Malm, B.G. ; Grahn, J.V. ; Oestling, M. ; Landgren, G.
Pub. info.: CVD XV, proceedings of the fifteenth International Symposium on Chemical Vapor Deposition.  pp.427-434,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-13
2.

Conference Proceedings
Conference Proceedings
2. Novel Integration Concepts for SiGe-Based RF-MOSFETs (Invited paper)
Ostling, M. ; Malm, B. G. ; Hellstrom, P-E. ; Radamson, H.H. ; Isheden, C. ; Seger, J. ; von Haartman, M. ; Zhang, S.-L.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.270-284,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-06
3.

Conference Proceedings
Conference Proceedings
3. Phosphorus Diffusion in Silicon; Influence of Annealing Conditions
Christensen, J.S. ; Kuznetsov, A. Yu. ; Radamson, H.H. ; Svensson, B.G.
Pub. info.: Si front-end processing -- physics and technology of dopant-defect interactions III : symposium held April 17-19, 2001, San Francisco, California, U.S.A..  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 669