High Quality Ultra Thin HfO 2 Gate Stack Prepared by In-Situ RT-MOCVD Process

High Quality Ultra Thin HfO 2 Gate Stack Prepared by In-Situ RT-MOCVD Process

Author(s):

Lee, S.J.

Publication title:

Rapid thermal and other short-time processing technologies II : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2001-9

Pub. Year:

2001

Page(from):

231

Page(to):

238

Pages:

8

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773157 [1566773156]

Language:

English

Call no.:

E23400/2001-9

Type:

Conference Proceedings

Details

TDL ID:	ZA00014012
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Rapid Thermal and Other Short-Time Processing Technologies ; Meeting of the Electrochemical Society
Conf. info. (Number):	2nd ; 199th
Conf. info. (Venue):	Washington D.C., USA
Conf. info. (Date):	2001.03.24-2001.03.29

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