Search records | 東京工業大学附属図書館文献データベース

You can search for articles included in proceedings of international conferences and technical papers which Tokyo Tech Library holds.
Tokyo Tech members can obtain tables of contents of 17,000 foreign journals by SwetScan. Tokyo Tech Library does not cover all of them.
List of Searchable Databases

Search for other sites by same keyword(s).

CiNii Books

NDL Search

WebcatPlus

amazon

カーリル

WorldCat

Clear Form

Filter

Title:

Author:

ISBN / ISSN / Paper No:

Source Title:

Publisher:

Pub. Date:

～

Type:

Conference Proceedings

Technical Paper

Academic Journal

Clear Form

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

44 results

Conference Proceedings

1. Forward Current of Al⁺ Implanted 4H-SiC Diodes: A Study on Periphery and Area Components

M. Puzzanghera ; R. Nipoti

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.773-776, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

2. Nitridation of the SiO₂/SiC Interface by N⁺ Implantation: Hall versus Field Effect Mobility in n-Channel Planar 4H-SiC MOSFETs

F. Moscatelli ; A. Poggi ; S. Solmi ; R. Nipoti ; A. Armigliato

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.491-494, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

3. Ultra Fast High Temperature Microwave Annealing of Ion Implanted Large Bandgap Semiconductors

M.V. Rao ; Y.L. Tian ; S.B. Qadri ; J.A. Freitas Jr. ; R. Nipoti

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.709-712, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

4. Al⁺ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts

R. Nipoti ; A. Hallén ; A. Parisini ; F. Moscatelli ; S. Vantaggio

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.767-772, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

5. Microwave Annealing of Al⁺ Implanted 4H-SiC: Towards Device Fabrication

A. Nath ; A. Parisini ; Y.L. Tian ; M.V. Rao ; R. Nipoti

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.653-656, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

6. Al⁺ Implanted 4H-SiC p⁺-i-n Diodes: Evidence for Post-Implantation-Annealing Dependent Defect Activation

U. Grossner ; F. Moscatelli ; R. Nipoti

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.657-660, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

7. Passivation by N Implantation of the SiO₂/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability

A. Poggi ; F. Moscatelli ; S. Solmi ; R. Nipoti

Pub. info.:	Silicon Carbide 2010--materials, processing and devices : symposium held April 5-9, 2010, San Francisco, California. 1246 pp.201-206, 2010. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	1246

Conference Proceedings

8. SiC Device Manufacturing: How Processing Impacts the Material and Device Properties

U. Grossner ; G. Alfieri ; R. Nipoti

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.381-386, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

9. Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide

H.M. Ayedh ; R. Nipoti ; A. Hallén ; B.G. Svensson

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.351-354, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

10.

Conference Proceedings

10. Al⁺ Ion Implanted On-Axis

R. Nipoti ; A. Parisini ; A. Carnera ; C. Albonetti ; S. Vantaggio

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.399-402, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

44 results

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

Filtering by:

Author: R. Nipoti