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12 results

Conference Proceedings

1. The Deposition of Polycrystalline SiGe with Different Ge Precursors

X. Shi ; M. Schaekers ; F. Leys ; R. Loo ; M.R. Caymax

Pub. info.:	SiGe and Ge, materials, processing, and devices. pp.849-860, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(7)

Conference Proceedings

2. Selective Epitaxy of Si/SiGe to Improve pMOS Devices by Recessed Source/Drain and/or Buried SiGe Channels

R. Loo ; P. Verheyen ; R. Rooyackers ; C. Walczyk ; F. Leys

Pub. info.:	SiGe and Ge, materials, processing, and devices. pp.453-465, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(7)

Conference Proceedings

3. The Combination of Embedded Si_1-xGe_x S/D and Metal Gate Options for High Performance pMOS Transistors

P. Verheyen ; S. Severi ; G. Eneman ; R. Loo ; D. Shamiryan

Pub. info.:	SiGe and Ge, materials, processing, and devices. pp.697-711, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(7)

Conference Proceedings

4. Vapor Phase Doping with N-type Dopant into Silicon by Atmospheric Pressure Chemical Vapor Deposition

S. Takeuchi ; N. Nguyen ; F.E. Leys ; R. Loo ; T. Conard

Pub. info.:	SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. pp.495-502, 2008. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(10)

Conference Proceedings

5. Electrical Activity of Dislocations and Defects in Strained Si and Ge Based Devices

E.R. Simoen ; G. Eneman ; P. Verheyen ; R. Loo ; M. Bargallo Gonzalez

Pub. info.:	SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. pp.513-527, 2008. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(10)

Conference Proceedings

6. In-Line Characterization of Heterojunction Bipolar Transistor Base Layers by High-Resolution X-Ray Diffraction

N. Duy Nguyen ; R. Loo ; A. Hikavyy ; B. Van Daele ; P. Ryan

Pub. info.:	Analytical Techniques for Semiconductor Materials and Process Characterization 5 (ALTECH 2007) (plus Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes). pp.151-160, 2007. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	10(1)

Conference Proceedings

7. Ge Epitaxy on (100) Ge: High Growth Rates at Low Temperature from GeH₄ using N₂ as a Carrier Gas

F. Leys ; R. Bonzom ; R. Loo ; A. Theuwis ; W. Vandervorst

Pub. info.:	SiGe and Ge, materials, processing, and devices. pp.209-210, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(7)

Conference Proceedings

8. High Hole Mobility SGOI Substrates Obtained by the Germanium Condensation Technique

L. Souriau ; T. Nguyen ; E. Augendre ; R. Loo ; V. Terzieva

Pub. info.:	SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. pp.79-89, 2008. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(10)

Conference Proceedings

9. Selective Epitaxial Growth of Germanium on Si Wafers with Shallow Trench Isolation: An Approach for Ge Virtual Substrates

G. Wang ; F.E. Leys ; L. Souriau ; R. Loo ; M. Caymax

Pub. info.:	SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. pp.829-836, 2008. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(10)

10.

Conference Proceedings

10. Relaxation-Induced Excess Leakage Current in Recessed Si₁₋xGex Source/Drain Junctions

M. B. Gonzalez ; M. Chowdhury ; N. Bhouri ; P. Verheyen ; F. Leys ; O. Richard ; R. Loo ; C. Claeys ; B. Simoen ; V. Machkaoutsan ; P. Tomasini ; S. Thomas ; J. Lu ; J. Weijtmans ; R. Wise

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment. pp.389-396, 2007. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	6(1)

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Author: R. Loo