1.

Conference Proceedings
Conference Proceedings
1. High Voltage, Low On-Resistance 4H-SiC BJTs with Improved Junction Termination Extension
R. Ghandi ; B. Buono ; M. Domeij ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.706-709,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
2.

Conference Proceedings
Conference Proceedings
2. Current Gain Degradation in 4H-SiC Power BJTs
B. Buono ; R. Ghandi ; M. Domeij ; G. Malm ; C.M. Zetterling
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.702-705,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
3.

Conference Proceedings
Conference Proceedings
3. Measurements and Simulations of Lateral PNP Transistors in a SiC NPN BJT Technology for High Temperature Integrated Circuits
L. Lanni ; R. Ghandi ; M. Domej ; C.M. Zetterling ; G. Malm
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.758-761,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
4.

Conference Proceedings
Conference Proceedings
4. 1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance
H.S. Lee ; M. Domeij ; C.M. Zetterling ; R. Ghandi ; M. Östling
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1151-1154,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
5.

Conference Proceedings
Conference Proceedings
5. Investigation of Current Gain Degradation in 4H-SiC Power BJTs
B. Buono ; R. Ghandi ; M. Domeij ; B.G. Malm ; C.M. Zetterling
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1131-1134,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
6.

Conference Proceedings
Conference Proceedings
6. Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide
R. Ghandi ; H.S. Lee ; M. Domeij ; C.M. Zetterling ; M. Östling
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.635-638,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
7.

Conference Proceedings
Conference Proceedings
7. Bipolar Integrated OR-NOR Gate in 4H-SiC
L. Lanni ; R. Ghandi ; C.M. Zetterling ; B.G. Malm ; M. Östling
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1257-1260,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
8.

Conference Proceedings
Conference Proceedings
8. Implantation-Free Low On-Resistance 4H-SiC BJTs with Common-Emitter Current Gain of 50 and High Blocking Capability
R. Ghandi ; H.S. Lee ; M. Domeij ; B. Buono ; C.M. Zetterling
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.833-836,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
9.

Conference Proceedings
Conference Proceedings
9. Experimental Evaluation of Different Passivation Layers on the Performance of 3kV 4H-SiC BJTs
R. Ghandi ; M. Domeij ; R. Esteve ; B. Buono ; A. Schöner
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.661-664,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
10.

Conference Proceedings
Conference Proceedings
10. Temperature Modeling and Characterization of the Current Gain in 4H-SiC Power BJTs
B. Buono ; R. Ghandi ; M. Domeij ; B.G. Malm ; C.M. Zetterling
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1061-1064,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648