1.

Conference Proceedings
Conference Proceedings
1. Properties of Gate-Quality Silicon Nitride and Oxynitride Dielectrics Deposited Using an Electron Cyclotron-Resonance Plasma Source
Landheer, D. ; Hulse, J.E. ; Quance, T. ; Aers, G.C. ; Sproule, G.I. ; Lennard, W.N. ; Simpson, P.J. ; Nlassoumi, G.R.
Pub. info.: Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium.  pp.75-89,  1999.  Pennington, New Jersey.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-6
2.

Conference Proceedings
Conference Proceedings
2. Properties of Gate-Quality SiO2 Films Prepared by Electron Cyclotron Resonance Chemical Vapour Deposition in an Ultra-High Vacuum Processing System
Tao, Y. ; Landheer, D. ; Hulse, J. E. ; Xu, D. -X. ; Quance, T.
Pub. info.: Ultraclean semiconductor processing technology and surface chemical cleaning and passivation : Symposum held April 17-19, 1995, San Francisco, California, USA.  pp.255-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 386