1.

Conference Proceedings
Conference Proceedings
1. Recent Results in High Pressure Growth of GaN Single Crystals
Krukowski, S. ; Bockowski, M. ; Grzegory, I. ; Lucznik, B. ; Nowak, G. ; Wroblewski, M. ; Leszczyaski, M. ; Teissevre, G. ; Suski, T. ; Porowski, S.
Pub. info.: Proceedings of the Second Symposium on III-V Nitride Materials and Processes.  pp.189-200,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-34
2.

Conference Proceedings
Conference Proceedings
2. Polarity of GaN
Liliental-Weber, Z. ; Benamara, M. ; Richter, O. ; Swider, W. ; Washburn, J. ; Grzegory, I. ; Porowski, S. ; Yang, J. W. ; Nakamura, S.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.363-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
3.

Conference Proceedings
Conference Proceedings
3. Highly chemical reactive ion etching of gallium nitride
Karouta, F. ; Jacobs, B. ; Moerman, I. ; Jacobs, K. ; Weyher, J. L. ; Porowski, S. ; Crane, R. ; Hageman, P. R.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.76.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
4.

Conference Proceedings
Conference Proceedings
4. GaN Crystals Grown in the Increased Volume High-Pressure Reactors
Porowski, S. ; Bockowski, M. ; Lucznik, B. ; Wroblewski, M. ; krukowski, S. ; Grzegory, I. ; Leszczynski, M. ; Nowak, G. ; Pakula, K. ; Baranowski, J.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.35-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
5.

Conference Proceedings
Conference Proceedings
5. GaN Crystals: Growth and Doping Under Pressure
Grzegory, I. ; Bockowski, M. ; Lucznik, B. ; Wroblewski, M. ; Krukowski, S. ; Weyher, J. ; Nowak, G. ; Suski, T. ; Leszczynski, M. ; Teisseyre, H. ; Litwin-Staszewska, E. ; Porowski, S.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.15-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
6.

Conference Proceedings
Conference Proceedings
6. Homoepitaxial and Heteroepitaxial Gallium Nitride Grown by Molecular Beam Epitaxy
Foxon, C. T. ; Cheng, T. S. ; Korakakis, D. ; Novikov, S. V. ; Campion, R. P. ; Grzegory, I. ; Porowski, S. ; Albrecht, M. ; Strunk, H. P.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G4.11.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
7.

Conference Proceedings
Conference Proceedings
7. Observation of Native Ga Vacancies in GaN by Positron Annihilation
Saarinen, K. ; Laine, T. ; Kuisma, S. ; Nissila, J. ; Hautojarvi, P. ; Dobrzynski, L. ; Baranowski, J. M. ; Pakula, K. ; Stepniewski, R. ; Wojdak, M. ; Wysmolek, A. ; Suski, T. ; Leszczynski, M. ; Grzegory, I. ; Porowski, S.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.757-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
8.

Conference Proceedings
Conference Proceedings
8. Near Defect-Free GaN Substrates
Porowski, S.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G1.3.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
9.

Conference Proceedings
Conference Proceedings
9. GaN Homoepitaxy for Device Applications
Kamp, M. ; Kirchner, C. ; Schwegler, V. ; Pelzmann, A. ; Ebeling, K. J. ; Leszczynski, M. ; Grzegory, I. ; Suski, T. ; Porowski, S.
Pub. info.: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G10.2.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 537
10.

Conference Proceedings
Conference Proceedings
10. Structural Defects in Heteroepitaxial and Homoepitaxial GaN
Lillental-Weber, Zuzanna ; Ruvimov, S. ; Kisielowski, Ch. ; Chen, Y. ; Swider, W. ; Washburn, J. ; Newman, N. ; Gassmann, A. ; Liu, X. ; Schloss, L. ; Weber, E. R. ; Grzegory, I. ; Bockowski, M. ; Jun, J. ; Suski, T. ; Pakula, K. ; Baranowski, J. ; Porowski, S. ; Amano, H. ; Akasaki, I.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.351-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395