1.

Conference Proceedings
Conference Proceedings
1. HETEROEPITAXIAL METAL OXIDES ON SILICON BY LASER ABLATIONA
Fenner, D. B. ; Fork, D. K. ; Connell, G., A. N. ; Boyce, J. B. ; Ponce, F. A. ; Tramontana, J. C. ; Viano, a. M. ; Geballe, T. H.
Pub. info.: Laser ablation for materials synthesis : symposium held April 19-20, 1990, San Francisco, California, U.S.A..  pp.187-192,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 191
2.

Conference Proceedings
Conference Proceedings
2. INTERFACE FORMATION AND THE HEREROEPITAXY OF ZnSe ON Si
Bringans, R. D. ; Biegelsen, D. K. ; Ponce, F. A. ; Swartz, L.-E. ; Tramontana, J. C.
Pub. info.: Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A..  pp.195-200,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 198
3.

Conference Proceedings
Conference Proceedings
3. MICROSTRUCTURE OF IMPURITY INDUCED DISORDERING AT THE GaAs/InGaAlP INTERFACE
Thorton, R. L. ; Ponce, F. A. ; Anderson, G. B. ; Endicott, F. J.
Pub. info.: Heteroepitaxy of dissimilar materials : symposium held April 29-May 2, 1991, Anaheim, California, U.S.A..  pp.349-354,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 221
4.

Conference Proceedings
Conference Proceedings
4. Deep green emission at 570nm from InGaN/GaN MQW active region grown on bulk AIN substrate [5941-07]
Shahedipour-Sandvik, F. ; Grandusky, J. R ; Jamil, M. ; Jindal, V. ; Schujman, S. B. ; Schowalter, L J. ; Liu, R. ; Ponce, F. A. ; Cheung, M. ; Carwright, A.
Pub. info.: Fifth international conference on solid state lighting : 1-4 August 2005, San Diego, California, USA.  pp.594107-594107,  2005.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 5941
5.

Conference Proceedings
Conference Proceedings
5. Lattice structure at ZnSe-GaAs heterojunction interfaces prepared by organometallic chemical vapor deposition
Ponce, F. A. ; Stutius, W. ; Werthen J. G
Pub. info.: Interfaces and contacts : symposium held November 1982 in Boston, Massachusetts, U.S.A..  pp.133-144,  1983.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 18
6.

Conference Proceedings
Conference Proceedings
6. Lattice structure and electrical properties of epitaxial aluminum on gallium arsenide (Abstract)
Ponce, F. A. ; Eglash, S. J.
Pub. info.: Interfaces and contacts : symposium held November 1982 in Boston, Massachusetts, U.S.A..  pp.317-318,  1983.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 18
7.

Conference Proceedings
Conference Proceedings
7. CRYSTALLINE PARTICLES IN THERMALLY-GROWN SILICON DIOXIDE
Ponce, F. A. ; Yamashita, T.
Pub. info.: Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A..  pp.201-206,  1983.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 14
8.

Conference Proceedings
Conference Proceedings
8. *THE INITIAL STAGES OF SILICIDE EPITAXY-NUCLEATION AND MORPHOLOGY
Nemanich, R. J. ; Doland, C. M. ; Ponce, F. A.
Pub. info.: Initial stages of epitaxial growth : symposium held April 22-24, 1987, Anaheim, California, U.S.A..  pp.139-150,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 94
9.

Conference Proceedings
Conference Proceedings
9. Structure of Thermally-Induced Microdefects in Czocharlski Silicon
Ponce, F. A. ; Hanh, S.
Pub. info.: Electron microscopy of materials : symposium held November 1983 in Boston, Massachusetts, U.S.A..  pp.153-158,  1984.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 31
10.

Conference Proceedings
Conference Proceedings
10. *ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES
Ponce, F. A. ; Anderson, G. B. ; Ballingall, J. M.
Pub. info.: Materials for infrared detectors and sources : symposium held December 1-5, 1986, Boston, Massachusetts, U.S.A..  pp.199-208,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 90