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AIGaN/GaN Heterostructure Field Effect Transistors Fabricated on 100mm Si/Poly Sic Composite Substrates

Author(s):
Roberts, J.C.
Rajagopal, P.
Cook, J.W.Jr.
Therrien, R.J.
Piner, E.L.
Linthicum, K.J.
Hobart, K.D.
Twigg, M.
Mittereder, J.
Binari, S.
Kub, F.J.
6 more
Publication title:
Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2005-02
Pub. Year:
2005
Page(from):
151
Page(to):
156
Pages:
6
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774604 [1566774608]
Language:
English
Call no.:
E23400/200502
Type:
Conference Proceedings

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