1.

Conference Proceedings
Conference Proceedings
1. Impact of nitrogen ion implantation on deep submicron SALICIDE process
Lim,C.W, ; Lahiri,S.K. ; Tung,C.H. ; Wong,S.M. ; Lee,K.H. ; Wong,H. ; Pey,K.L. ; Chan,L.H.
Pub. info.: Microelectronic Device Technology : 1-2 October 1997, Austin, Texas.  pp.151-161,  1997.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3212
2.

Conference Proceedings
Conference Proceedings
2. Effect of argon or nitrogen preamorphized implant on SALICIDE formation for deep submicron CMOS technology
Ho,C.S. ; Pey,K.L. ; Wong,H. ; Karunasiri,R.P.G. ; Chua,S.J. ; Lee,K.H. ; Tang,Y. ; Wong,S.M. ; Chan,L.H.
Pub. info.: Microlithographic Techniques in IC Fabrication.  pp.243-254,  1997.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3183
3.

Conference Proceedings
Conference Proceedings
3. Estimation of the area of voids in deep-submicron aluminium interconnects using resistance-noise measurements
Chu,L.W. ; Pey,K.L. ; Chim,W.K. ; Loh,S.K. ; Er,E.
Pub. info.: Microelectronic Yield, Reliability, and Advanced Packaging.  pp.157-167,  2000.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4229
4.

Conference Proceedings
Conference Proceedings
4. Degradation of PMOS series resistance due to Si implantation for Ti-salicide process
Lim,E.H. ; Siah,S.-Y. ; Lim,C.W. ; Lee,Y.M. ; Zheng,J.Z. ; Sundaresan,R. ; Pey,K.L.
Pub. info.: Microelectronic Device Technology III.  pp.152-158,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3881