1.

Conference Proceedings
Conference Proceedings
1. Growth of AlN and AlN-SiC Solid Solution by Sublimation Method
Anikin, M. ; Chaussende, D. ; Pernot, E. ; Chaix-Pluchery, O. ; Roussel, H. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1501-1504,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding
Chichignoud, G. ; Auvray, L. ; Blanquet, E. ; Anikin, M. ; Pernot, E. ; Bluet, J.M. ; Chaudouet, P. ; Mermoux, M. ; Moisson, C. ; Letertre, F. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.71-74,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Characterization of Bulk <> 3C-SiC Single Crystals Grown on 4H-SiC by the CF-PVT Method
Latu-Romain, L. ; Chaussende, D. ; Balloud, C. ; Juillaguet, S. ; Rapenne, L. ; Pernot, E. ; Camassel, J. ; Pons, M. ; Madar, R.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.99-102,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
4.

Conference Proceedings
Conference Proceedings
4. Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces
Vicente, P. ; Pernot, E. ; Chaussende, D. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.729-732,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron Topography
Pernot, E. ; Neyret, E. ; Moulin, C. ; Pernot-Rejmankova, P. ; Templier, F. ; Cioccio, L.Di. ; Billon, T. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.419-422,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Solid-Phase Epitaxial Growth of Bulk SiC Single Crystals
Pernot, E. ; Anikin, M. ; Pons, M. ; Chaix-Pluchery, O. ; Baillet, F. ; Matko, I. ; Madar, R.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.143-146,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Seed Surface Preparation for SiC Sublimation Growth
Pelissier, B. ; Moulin, C. ; Pernot, E. ; Anikin, M. ; Grosse, P. ; Faure, C. ; Ferrand, B. ; Couchaud, M. ; Basset, G. ; Madar, R.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.47-50,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
8.

Conference Proceedings
Conference Proceedings
8. Progress in SiC Bulk Growth
Anikin, M. ; Chaix, O. ; Pernot, E. ; Pelissier, B. ; Pons, M. ; Pisch, A. ; Bernard, C. ; Grosse, P. ; Faure, C. ; Grange, Y. ; Basset, G. ; Moulin, C. ; Madar, R.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.13-16,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
9.

Conference Proceedings
Conference Proceedings
9. Investigation into the Film Growth of AIN on SiC by Low Pressure Chemical Vapour Deposition
Williams, V. ; Pernot, E. ; Ramberg, E. ; Blanquet, E. ; Bluet, J. M. ; Madar, R.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1507-1510,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
10.

Conference Proceedings
Conference Proceedings
10. Electrochemical Characterization of p-Type Hexagonal SiC
Kayambaki, M. ; Zekentes, K. ; Tsagaraki, K. ; Pernot, E. ; Yakimova, R.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.619-622,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356