Search records | 東京工業大学附属図書館文献データベース

You can search for articles included in proceedings of international conferences and technical papers which Tokyo Tech Library holds.
Tokyo Tech members can obtain tables of contents of 17,000 foreign journals by SwetScan. Tokyo Tech Library does not cover all of them.
List of Searchable Databases

Clear Form

Search for other sites by same keyword(s).

CiNii Books

NDL Search

WebcatPlus

amazon

カーリル

WorldCat

Filter

Title:

Author:

ISBN / ISSN / Paper No:

Source Title:

Publisher:

Publication Year:

～

Clear Form

Type:

Conference Proceedings

Technical Paper

Academic Journal

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

73 results

Conference Proceedings

1. Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes

Negoro, Y. ; Kimoto, T. ; Matsunami, H. ; Pensl, G.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.843-846, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. RAPID ISOTHERMAL ANNEALING OF N-IMPLANTED 6H-SiC LAYERS USED FOR FABRICATION OF p-n PHOTODIODES

Pensl, G. ; Helbig, R. ; Zhang, H. ; Ziegler, G. ; Lanig, P.

Pub. info.:	Novel refractory semiconductors : symposium held April 21-23, 1987, Anaheim, California, U.S.A.. pp.195-200, 1987. Pittsburgh, Penn.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	97

Conference Proceedings

3. Electronic Raman Studies of Shallow Donors in Silicon Carbide

Pusche, R. ; Hundhausen, M. ; Ley, L. ; Semmelroth, K. ; Pensl, G. ; Desperrier, P. ; Wellmann, P.J. ; Haller, E.E. ; Ager, J.W. ; Starke, U.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.579-584, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. New Aspects in n-type Doping of SiC with Phosphorus

Rauls, E. ; Gerstmann, U. ; Greulich-Weber, S. ; Semmelroth, K. ; Pensl, G. ; Haller, E.E.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.609-612, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

5. PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC Substrate

Polychroniadis, E. K. ; Mantzari, A. ; Freudenberg, A. ; Wollweber, J. ; Nitschke, R. ; Frank, T. ; Pensl, G. ; Schoner, A.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.319-322, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

6. ALD Deposited Al2O3 Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere

Gao, K. Y. ; Seyller, T. ; Emtsev, K. ; Ley, L. ; Ciobanu, F. ; Pensl, G.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.559-562, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

7. INFRARED STUDIES OF THE DOUBLE ACCEPTOR ZINC IN SILICON

Dornen, A. ; Kienle, R. ; Thonke, K. ; Stolz, P. ; Pensl, G. ; Grunebau, D. ; Stolwijk, N.A.

Pub. info.:	Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.21-26, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	163

Conference Proceedings

8. HYDROGEN NEUTRALIZATION OF CHALCOGEN DOUBLE DONOR CENTERS IN SINGLE-CRYSTAL SILICON

Pensl, G. ; Roos, G. ; Stolz, P. ; Johnson, N. M. ; Holm, C.

Pub. info.:	Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.241-246, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	104

Conference Proceedings

9. *ELECTRONIC DEFECTS IN SILICON AFTER TRANSIENT ISOTHERMAL ANNEALING

Pensl, G. ; Schulz, M. ; Stolz, P. ; Johnson, N. M. ; Gibbons, J. F. ; Hoyt, J. L.

Pub. info.:	Energy beam-solid interactions and transient thermal processing : symposium held November 1983 in Boston, Massachusetts, U.S.A.. pp.347-358, 1984. New York. North-Holland
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	23

10.

Conference Proceedings

10. SiC/SiO2 Interface States: Properties and Models

Afanas'ev, V. V. ; Ciobanu, F. ; Dimitrijev, S. ; Pensl, G. ; Stesmans, A.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.563-568, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

73 results

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

Filtering by:

Author: Pensl, G.