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16 results

Conference Proceedings

1. 76 Effect of impurity concentration on 1.54-ｦﾌm emission from GaN:Er

Abernathy,C.R. ; Overberg,M.J. ; Mackenzie,J.D. ; Hommerich,U. ; Pearton,S.J. ; Wilson,R.G. ; Zavada,J.M.

Pub. info.:	Rare-earth-doped materials and devices IV : 26-27 January 2000, San Jose, California. pp.76-86, 2000. Bellingham, Washington. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3942

Conference Proceedings

2. Local mode spectroscopy and model study for assessing the role of light defects in III-V compound semiconductors

Talwar,D.N. ; Manasreh,M.O. ; Fischer,D.W. ; Pearton,S.J. ; Matous,G.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.533-538, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

3. New optical sensor for real-time in-situ endpoint monitoring during dry etching of III-V ternary multistack layers

Liddane,K.J. ; Benferhat,R. ; Lee,J. ; Westerman,R. ; Johnson,D.J. ; Donohue,J.F. ; Sasserath,J.N. ; Pearton,S.J.

Pub. info.:	Process, equipment, and materials control in integrated circuit manufacturing V : 22-23 September, 1999, Santa Clara, California. pp.300-308, 1999. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3882

Conference Proceedings

4. Dry-etching processes for fabrication of QWIPs and other detector structures

Pearton,S.J.

Pub. info.:	Photodetectors : materials and devices II : 12-14 February 1997, San Jose, California. pp.118-130, 1997. Bellingham, WA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2999

Conference Proceedings

5. Off-Axis Motions and Distortions in Acceptor-H Complexes from Uniaxial Stress Studies

Bergman,K. ; Stavola,M. ; Pearton,S.J. ; Lopata,J. ; Hayes,T. ; Grimmeiss,H.G.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part3 pp.1015-1020, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

6. Hydrogenation of III-V Semiconductors During Processing

Pearton,S.J.

Pub. info.:	Hydrogen in compound semiconductors. pp.113-140, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	148-149

Conference Proceedings

7. Effect of multiple trapping on hydrogen diffusion in silicon

Borenstein,J.T. ; Corbett,J.W. ; Pearton,S.J.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.51-56, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

8. Passivation of shallow acceptors in Si and GaAs by annealing in H2

Veloarisoa,I.A. ; Kozuch,D.M. ; Stavola,M. ; Peale,R.E. ; Watkins,G.D. ; Pearton,S.J. ; Abernathy,C.R. ; Hobson,W.S.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.111-118, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

9. Characterisation of GaAs/AlGaAs heterostructures grown by OMVPE using trimethylamine alane as a new alu-minum source

Hobson,W.S. ; McAfee,S.R. ; Jones,K.S. ; Paroskevopoulos,N.C. ; Abernathy,C.R. ; Sputz,S.K. ; Harris,T.D. ; Schnoes,M.Lamont ; Pearton,S.J.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.1063-1068, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

10.

Conference Proceedings

10. NoVel Properties of Hydrogen-Containing Complexes Revealed by their Hydrogen Vibrations

Stavola,M. ; Zheng,J.-F. ; Cheng,Y.M. ; Abernathy,C.R. ; Pearton,S.J.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.809-816, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

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Author: Pearton,S.J.