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16 results

Conference Proceedings

1. Low-frequency noise in 4H-SiC BJTs

Rumyantsev, S. L. ; Levinshtein, M. E. ; Agarwal, A. K. ; Palmour, J. W.

Pub. info.:	Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain. pp.251-254, 2004. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5470

Conference Proceedings

2. CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY OF DEFECTS IN BETA SILICON CARBIDE THIN FILMS

Carter Jr., C. H. ; Edmond, J. A. ; Palmour, J. W. ; Ryu, J. ; Kim, H. J. ; Davis, R. F.

Pub. info.:	Microscopic identification of electronic defects in semiconductors : symposium held April 15-18, 1985, San Francisco, California, U.S.A.. pp.593-598, 1985. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	46

Conference Proceedings

3. Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes

Ivanov, P. A. ; Levinshtein, M. E. ; Mnatsakanov, T. T. ; Palmour, J. W. ; Singh, R. ; Irvin, K. G. ; Das, M.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.973-976, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

4. SiC Devices with ONO Stacked Dielectrics

Lipkin, L. A. ; Palmour, J. W.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1093-1096, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

5. Turn-On Process in High-Voltage 4H-SiC Thyristors

Dyakonova, N. V. ; Levinshtein, M. E. ; Palmour, J. W. ; Rumyantsev, S. L. ; Singh, R.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.211-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

6. 5.5-kV Bipolar Diodes From High-Quality CVD 4H-SiC

Irvine, K. G. ; Singh, R. ; Paisley, M. J. ; Palmour, J. W. ; Kordina, O. ; Carter, C. H., Jr.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.119-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

7. Characterization of thick 4H-SiC hot-wall CVD layers

Paisley, M. J. ; Irvine, K. G. ; Kordina, O. ; Singh, R. ; Palmour, J. W. ; Carter, C. H. Jr.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.167-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

8. High Temperature, High Current, 4H-SiC Accu-DMOSFET

Singh, R. ; Ryu, S. -H. ; Palmour, J. W.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1271-1274, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

9. 4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs

Suvorov, A. V. ; Lipkin, L. A. ; Johnson, G. M. ; Singh, R. ; Palmour, J. W.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1275-1278, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

10.

Conference Proceedings

10. Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities

Dyakonova, N. V. ; Ivanov, P. A. ; Kozlov, V. A. ; Levinshtein, M. E. ; Palmour, J. W. ; Rumyantsev, S. L. ; Singh, R.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1319-1322, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

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