Search records | 東京工業大学附属図書館文献データベース

You can search for articles included in proceedings of international conferences and technical papers which Tokyo Tech Library holds.
Tokyo Tech members can obtain tables of contents of 17,000 foreign journals by SwetScan. Tokyo Tech Library does not cover all of them.
List of Searchable Databases

Clear Form

Search for other sites by same keyword(s).

CiNii Books

NDL Search

WebcatPlus

amazon

カーリル

WorldCat

Filter

Title:

Author:

ISBN / ISSN / Paper No:

Source Title:

Publisher:

Publication Year:

～

Clear Form

Type:

Conference Proceedings

Technical Paper

Academic Journal

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

17 results

Conference Proceedings

1. Development of Low Resistance Al/Ti Stacked Metal Contacts to p-Type 4H-SiC

M.R. Jennings ; A. Perez-Tomas ; D. Walker ; L. Zhu ; P.A. Losee ; W. Huang ; S. Balachandran ; O.J. Guy ; J.A. Covington ; T.P. Chow ; P.A. Mawby

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.697-700, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

2. Si/SiC Substrates for the Implementation of Linear-Doped Power LDMOS Studied with Device Simulation

C.W. Chan ; Y. Bonyadi ; P.A. Mawby ; P.M. Gammon

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.844-847, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

3. Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair

N.A. Parker-Allotey ; D. Hamilton ; O. Alatise ; M.R. Jennings ; P.A. Mawby

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.1147-1150, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

4. SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps

A. Perez-Tomas ; M.R. Jennings ; P.A. Mawby ; J.A. Covington ; P. Godignon ; J. Millan ; N. Mestres

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.835-838, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

5. The Impact of Oxygen Flow Rate on the Oxide Thickness and Interface Trap Density in 4H-SiC MOS Capacitors

S.M. Thomas ; M.R. Jennings ; Y.K. Sharma ; C.A. Fisher ; P.A. Mawby

Pub. info.:	HeteroSiC & WASMPE 2013 : Selected, peer reviewed papers from the 5th Edition of International Workshop on Silicon Carbide Hetero-Epitaxy and Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC-WASMPE 2013), June 17-19, 2013, Nice, France. pp.149-152, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	806

Conference Proceedings

6. Impact of the Oxidation Temperature on the Interface Trap Density in 4H-SiC MOS Capacitors

S.M. Thomas ; M.R. Jennings ; Y.K. Sharma ; C.A. Fisher ; P.A. Mawby

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.599-602, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

7. Temperature and dI_DS/dt Dependence of the Switching Energy of SiC Schottky Diodes in Clamped Inductive Switching Applications

S. Jahdi ; O. Alatise ; P.A. Mawby

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.816-819, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

8. Functional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET Incorporation

S.A.O. Russell ; M.R. Jennings ; T.X. Dai ; F. Li ; D.P. Hamilton ; C.A. Fisher ; Y.K. Sharma ; P.A. Mawby ; A. Pérez-Tomás

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.155-158, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897

Conference Proceedings

9. Physical Characterisation of 3C-SiC(001)/SiO₂ Interface Using XPS

F. Li ; O. Vavasour ; M. Walker ; D.M. Martin ; Y.K. Sharma ; S.A.O. Russell ; M.R. Jennings ; A. Pérez-Tomás ; P.A. Mawby

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.151-154, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897

10.

Conference Proceedings

10. An Investigation into the Impact of Surface Passivation Techniques Using Metal-Semiconductor Interfaces

Y. Bonyadi ; P.M. Gammon ; Y.K. Sharma ; G. Baker ; P.A. Mawby

Pub. info.:	Silicon Carbide and Related Materials 2016. pp.443-446, 2017. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	897

17 results

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

Filtering by:

Author: P.A. Mawby