1.

Conference Proceedings
Conference Proceedings
1. Determination of the Coulomb Scattering Parameter (Alpha) for ALD HfO2/TiN Gate n and p-MOSFETs Using Negative Bias Temperature Stress
M. Adi Negara ; K. Cherkaoui ; P. Majhi ; W. Tsai ; D. Bauza
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.639-644,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
2.

Conference Proceedings
Conference Proceedings
2. CMOS Scaling For the Next Decade: Trends, Challenges and Opportunities
P. Majhi ; J. Oh ; S. Lee ; R. Harris ; H. Tseng
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment.  pp.253-262,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 13(1)
3.

Conference Proceedings
Conference Proceedings
3. High Performance Metal Gate CMOSFETs with Aggressively Scaled Hf-Based High-k
S. Song ; G. L. Zhang ; S. Bae ; P. Kirsch ; P. Majhi ; R. Choi ; B. Lee
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.609-624,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
4.

Conference Proceedings
Conference Proceedings
4. Atomic Layer Deposited Hf₂2 and HfSiO to Enable CMOS Gate Dielectric Scaling, Mobility, and VTH Stability
P. Kirsch ; M. Quevedo-Lopez ; S. Krishnan ; S. Song ; R. Choi ; P. Majhi ; Y. Senzaki ; G. Bersuker ; B. Lee
Pub. info.: Atomic layer deposition : at the 208th ECS Meeting, October 16-21, 2005, Los Angeles, California, USA.  pp.15-28,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(10)
5.

Conference Proceedings
Conference Proceedings
5. Prospect of High-k/Metal Gate Stack Technology for Future CMOS Devices
B. H. Lee ; P. Kirsch ; P. Majhi ; S. Song ; R. Chol ; N. Moumen ; G. Bersuker
Pub. info.: Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5.  pp.29-38,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(1)