1.

Conference Proceedings
Conference Proceedings
1. The Application of X-ray Metrology for Rapid Development of High-κ Dielectrics
P. Hung ; T. Böscke ; M. Wormington ; D.K. Bowen ; P. Lysaght
Pub. info.: Physics and technology of high-k gate dielectrics 6.  pp.149-152,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(5)
2.

Conference Proceedings
Conference Proceedings
2. The Influence of NH₃ Anneal on the Crystallization Kinetics of HfO₂ Gate Dielectric Films
P. Lysaght ; J. Bornett ; J. Woicik ; B. Foran ; G. Bersuker ; B. Lee
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.313-322,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
3.

Conference Proceedings
Conference Proceedings
3. Identifying Contributions to Electrical Instability in High-k Gate Stacks: As-Grown vs. Generated Defects
G. Bersuker ; P. Lysaght ; R. Choi
Pub. info.: Silicon nitride, silicon dioxide, and emerging dielectrics 9.  pp.687-704,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(3)