1.

Conference Proceedings
Conference Proceedings
1. Conductive Atomic Force Microscopy Studies on the Reliability of Thermally Oxidized SiO2/4H-SiC
P. Fiorenza ; R. Lo Nigro ; V. Raineri ; D. Salinas
Pub. info.: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.501-504,  2007.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 556-557
2.

Conference Proceedings
Conference Proceedings
2. A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs
P. Fiorenza ; A. Frazzetto ; L.K. Swanson ; F. Giannazzo ; F. Roccaforte
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.699-702,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
3.

Conference Proceedings
Conference Proceedings
3. Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces
L.K. Swanson ; P. Fiorenza ; F. Giannazzo ; F. Roccaforte
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.719-722,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
4.

Conference Proceedings
Conference Proceedings
4. Potentialities of Nickel Oxide as Dielectric for GaN and SiC Devices
R. Lo Nigro ; G. Greco ; L. Swanson ; G. Fisichella ; P. Fiorenza
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.777-780,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
5.

Conference Proceedings
Conference Proceedings
5. Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO2/4H-SiC Interfaces
L.K. Swanson ; P. Fiorenza ; F. Giannazzo ; S. Alessandrino ; S. Lorenti
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.715-718,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
6.

Conference Proceedings
Conference Proceedings
6. Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide Films
M. Camarda ; A. Canino ; P. Fiorenza ; A. Severino ; R. Anzalone
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.229-234,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
7.

Conference Proceedings
Conference Proceedings
7. Voids-Free 3C-SiC/Si Interface for High Quality Epitaxial Layer
R. Anzalone ; N. Piluso ; R. Reitano ; A. Alberti ; P. Fiorenza
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.159-162,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
8.

Conference Proceedings
Conference Proceedings
8. Electrical Properties Evaluation on High Quality Hetero-Epitaxial 3C-SiC(001) for MOSFET Applications
R. Anzalone ; S. Privitera ; A. Alberti ; N. Piluso ; P. Fiorenza
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.773-776,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
9.

Conference Proceedings
Conference Proceedings
9. Conduction Mechanisms at SiO2/4H-SiC Interfaces in MOS-Based Devices Subjected to Post Deposition Annealing in N2O
P. Fiorenza ; F. Giannazzo ; A. Frazzetto ; A. Guarnera ; M. Saggio
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.705-710,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
10.

Conference Proceedings
Conference Proceedings
10. Impact of Phosphorus Implantation on the Electrical Properties of SiO2/4H-SiC Interfaces Annealed in N2O
P. Fiorenza ; S. Di Franco ; F. Giannazzo ; S. Rascunà ; M. Saggio
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.701-704,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858