1.

Conference Proceedings
Conference Proceedings
1. Experimental Investigation of the Seeding Stage during SiC Solution Growth Using Si and Al-Si Solvents
Y.J. Shin ; K. Ariyawong ; B. Doisneau ; J.M. Dedulle ; P. Brosselard
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.81-84,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Cryogenic to High Temperature Exploration of 4H-SiC W-SBD
M. Berthou ; B. Asllani ; P. Brosselard ; P. Godignon
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.583-587,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
3.

Conference Proceedings
Conference Proceedings
3. An Ultrafast I-V Measurement Technique Accounting for Capacitive and Leakage Currents in Reverse Mode for SiC Power Devices
J.B. Fonder ; P. Brosselard ; D. Tournier ; M. Berthou ; B. Vergne
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.422-428,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
4.

Conference Proceedings
Conference Proceedings
4. Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range
B. Asllani ; M. Berthou ; D. Tournier ; P. Brosselard ; P. Godignon
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.741-744,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
5.

Conference Proceedings
Conference Proceedings
5. High Temperature Capability of High Voltage 4H-SiC JBS
M. Berthou ; P. Godignon ; B. Vergne ; P. Brosselard
Pub. info.: HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France.  pp.124-128,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 711
6.

Conference Proceedings
Conference Proceedings
6. 300°C SiC Blocking Diodes for Solar Array Strings
E. Maset ; E. Sanchis-Kilders ; P. Brosselard ; X. Jordá ; M. Vellvehi
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.925-928,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
7.

Conference Proceedings
Conference Proceedings
7. High Power Density SiC 450A AccuMOSFET for Current Limiting Applications
D. Tournier ; P. Bevilacqua ; D. Planson ; H. Morel ; P. Brosselard
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.911-914,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
8.

Conference Proceedings
Conference Proceedings
8. Reliability Aspects of High Voltage 4H-SiC JBS Diodes
P. Brosselard ; N. Camara ; X. Jordá ; M. Vellvehi ; E. Bano
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.935-938,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
9.

Conference Proceedings
Conference Proceedings
9. Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique
N. Dheilly ; D. Planson ; P. Brosselard ; J. Hassan ; P. Bevilacqua
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.703-706,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
10.

Conference Proceedings
Conference Proceedings
10. Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses
C. Raynaud ; D.M. Nguyen ; P. Brosselard ; A. Pérez-Tomás ; D. Planson
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.671-674,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617