1.

Conference Proceedings
Conference Proceedings
1. Wet Etching Step Evolutions for Selective Removal on Silicide or Germanide Applications
V. Carron ; P. Besson ; F. Pierre
Pub. info.: Cleaning and surface conditioning technology in semiconductor device manufacturing 10.  pp.309-320,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(2)
2.

Conference Proceedings
Conference Proceedings
2. Advanced Surface Preparation Development on a 300 mm Single Wafer Spin-on Platform
G. Briend ; P. Besson ; T. Salvetat ; O. Pollet
Pub. info.: Cleaning and surface conditioning technology in semiconductor device manufacturing 10.  pp.249-256,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(2)
3.

Conference Proceedings
Conference Proceedings
3. Evolution of Silicon Cleaning Technology Over the Last Twenty Years
J. Ruzyllo ; T. Hattori ; R.E. Novak ; P. Mertens ; P. Besson
Pub. info.: Cleaning and surface conditioning technology in semiconductor device manufacturing 10.  pp.3-7,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(2)
4.

Conference Proceedings
Conference Proceedings
4. MANAGEMENT OF METALLIC CONTAMINATION IN ADVANCED IC MANUFACTURING
A. Danel ; D. Renaud ; P. Besson ; C. Bigot ; A. Groujilet ; J. P. Joly ; M. Claes ; T. Bearda ; J. Frickinger
Pub. info.: Cleaning Technology in Semiconductor Device Manufacturing IX.  pp.3-10,  2006.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(3)
5.

Conference Proceedings
Conference Proceedings
5. Nickel Selective Etching Studies for Self-Aligned Silicide Process in Ge and SiGe-Based Devices
V. Carron ; M. Ribeiro ; P. Besson ; G. Rolland ; J. Hartmann
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.643-654,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
6.

Conference Proceedings
Conference Proceedings
6. Wet-Cleaning and Surface Characterization of Si₁₋xGex Relaxed Alloys (x=0.2-0.5) After Polishing: Applications for SGOI and Strained Silicon Structures Elaboration
A. Abbadie ; J. M. Hartmann ; P. Besson ; D. Rouchon ; P. Holliger ; C. Di Nardo ; T. Lardin ; Y. Campidelli ; B. Ghyselen ; T. Billon
Pub. info.: State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI.  pp.130-132,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(2)