1.

Conference Proceedings
Conference Proceedings
1. N-Channel MOS Transistors Below 0.5 ｦﾌm with Ultra-Shallow Channels Formed by Low Temperature Selective Silicon Epitaxy
Huang, P. L. ; Seastrand, K. ; Violette, K. E. ; Wolf, J. ; Ozturk, M. C.
Pub. info.: Rapid thermal and integrated processing IV : symposium held April 17-20, 1995, San Francisco, California, U.S.A..  pp.347-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 387
2.

Conference Proceedings
Conference Proceedings
2. OXIDE REMOVAL ON SILICON BY RAPID THERMAL PROCESSING USING SiH2Cl2 AND H2
Ren, X. ; Ozturk, M. C. ; Harris, G. ; Batchelor, D. ; Maher, D. M.
Pub. info.: Rapid thermal and integrated processing III : symposium held April 4-7, 1994, San Francisco, California, U.S.A..  pp.243-,  1994.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 342
3.

Conference Proceedings
Conference Proceedings
3. Rapid Thermal Chemical Vapor Deposition of Polycrystalline Silicon-Germanium Films on SiO2 and Their Properties
Li, V. Z-Q ; Mirabedini, M. R. ; Kuehn, R. T. ; Gladden, D. ; Batchelor, D. ; Christenson, K. ; Wortman, J. J. ; Ozturk, M. C. ; Maher, D. M.
Pub. info.: Polycrystalline thin films II : structure, properties, and applications : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.333-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 403
4.

Conference Proceedings
Conference Proceedings
4. Selective TiSi2 Formation Using TiCl4(g), Si(s) and H2(g): A Study of the Mask Loading Phenomena
Gladden, D. B. ; Weintraub, G. A. ; Ozturk, M. C.
Pub. info.: Silicide thin films - fabrication, properties, and applications : Symposium held November 27-30, 1995, Boston, Massachusetts, USA.  pp.295-,  1996.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 402
5.

Conference Proceedings
Conference Proceedings
5. A Comparison of MOS Devices with In Situ Boron Doped Polysilicon and Poly-SiGe Gates Deposited in an RTCVD System using Si2H6 and B2H6 Gas Mixture
Mirabedini, M. R. ; Li, V. Z-Q. ; Acker, A. R. ; Kuehn, R. T. ; Venables, D. ; Ozturk, M. C. ; Wortman, J. J.
Pub. info.: Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.207-,  1998.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 525
6.

Conference Proceedings
Conference Proceedings
6. In Situ Boron-Doped Epitaxial Silicon Films Grown by UHV-RTCVD: Applications in Channel Engineering and Ultrashallow Junction Formation
Ban, I. ; Ozturk, M. C. ; Lee, K. L.
Pub. info.: Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.283-,  1998.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 525
7.

Conference Proceedings
Conference Proceedings
7. Sub-Half Micron Elevated Source/Drain NMOSFETS by Low Temperature Selective Epitaxial Deposition
Sun, J. ; Bartholomew, R. F. ; Bellur, K. ; O'Neil, P. A. ; Srivastava, A. ; Violette, K. E. ; Ozturk, M. C. ; Osburn, C. M. ; Masnari, N. A.
Pub. info.: Rapid thermal and integrated processing V : symposium held April 8-12, 1996, San Francisco, California, U.S.A..  pp.343-,  1996.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 429
8.

Conference Proceedings
Conference Proceedings
8. *RAPID THERMAL CHEMICAL VAPOR DEPOSITION OF GERMANIUM AND GERMANIUM/SILICON ALLOYS ON SILICON: NEW APPLICATIONS IN THE FABRICATION OF MOS TRANSISTORS
Ozturk, M. C. ; Grider, D. T. ; Ashburn, S. P. ; Sanganeria, M. ; Wortman, J. J.
Pub. info.: Rapid thermal and integrated processing : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A..  pp.223-234,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 224
9.

Conference Proceedings
Conference Proceedings
9. IN-SITU DOPED MULTI-LAYER EPITAXIAL STRUCTURES WITH ABRUPT DOPING TRANSITIONS BY ULTRA HIGH VACUUM RAPID THERMAL CHEMICAL VAPOR DEPOSITION (UHV-RTCVD)
Ozturk, M. C. ; Celik, S. M. ; Ban, I. ; Harris, G. ; Sanganeria, M. K. ; Violette, K. E. ; Lee, A.
Pub. info.: Rapid thermal and integrated processing III : symposium held April 4-7, 1994, San Francisco, California, U.S.A..  pp.43-,  1994.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 342
10.

Conference Proceedings
Conference Proceedings
10. Rapid Thermal Chemical Vapor Formation of TiSi2: An Alternative Refractory Metallization Process for Device Fabrication
Gladden, D. B. ; Ren, X. ; Weintraub, C. E. ; Ozturk, M. C.
Pub. info.: Advanced metallization for future ULSI : symposium held April 8-11, 1996, San Francisco, California, U.S.A..  pp.523-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 427