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21 results

Conference Proceedings

1. Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid

Bahng, W. ; Kitou, Y. ; Nishizawa, S. ; Yamaguchi, H. ; Khan, M. N. ; Oyanagi, N. ; Arai, K. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.103-106, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

2. Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared Spectroscopy

Yaguchi, H. ; Narita, K. ; Hijikata, Y. ; Yoshida, S. ; Nakashima, S. ; Oyanagi, N.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.621-624, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. Shape of SiC Bulk Single Crystal Grown by Sublimation

Nishizawa, S. ; Kitou, Y. ; Bahng, W. ; Oyanagi, N. ; Khan, M. N. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.99-102, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

4. SiC Single Crystal Growth Rate Measurement by in-Situ Observation using the Transmission X-Ray Technique

Oyanagi, N. ; Nishizawa, S. ; Kato, T. ; Yamaguchi, H. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.75-78, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

5. In-Situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography

Kato, T. ; Oyanagi, N. ; Yamaguchi, H. ; Takano, Y. ; Nishizawa, S. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.457-460, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

6. Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth

Nishizawa, S. ; Kato, T. ; Kitou, Y. ; Oyanagi, N. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.43-46, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

7. Growth and Evaluation of High Quality SiC Crystal by Sublimation Method

Oyanagi, N. ; Yamaguchi, H. ; Kato, T. ; Nishizawa, S. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.87-90, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth

Kato, T. ; Oyanagi, N. ; Kitou, Y. ; Nishizawa, S. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.111-114, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. A Method of Reducing Micropipes in Thin Films by Using Sublimation Growth

Oyanagi, N. ; Nishizawa, S. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.107-110, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method

Hirose, F. ; Kitou, Y. ; Oyanagi, N. ; Kato, T. ; Nishizawa, S. ; Arai, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.75-78, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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