1.

Conference Proceedings
Conference Proceedings
1. Carbon Related Split-Interstitials in Electron-Irradiated n-type 6H-SiC
Pinheiro, M.V.B. ; Rauls, E. ; Gerstmann, U. ; Greulich-Weber, S. ; Spaeth, J.M. ; Overhof, H.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.551-554,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. * THE IMPACT OF A LONG-RANGED RANDOM POTENTIAL ON THE TRANSPORT PROPERTIES OF AMORPHOUS SEMICONDUCTORS
Overhof, H.
Pub. info.: Amorphous silicon technology, 1992.  pp.681-692,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 258
3.

Conference Proceedings
Conference Proceedings
3. Structure and Electrical Activity of Rare-Earth Dopants In Selected III-Vs
Filho, J.-S. ; Petit, S. ; Jones, R. ; Hourahune, B. ; Fraueuheim, Th ; Overhof, H. ; Coutinho, J. ; Shaw, M.J. ; Briddon, P.R. ; Oberg, S.
Pub. info.: GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A..  pp.471-478,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 798
4.

Conference Proceedings
Conference Proceedings
4. Spin Dependent Recombination in Si p-n Junctions
Meyer, B.K. ; Christmann, P. ; Stadler, W. ; Overhof, H. ; Spaeth, J-M. ; Greulich-Weber, S. ; Stich, B.
Pub. info.: Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects.  pp.221-234,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-1
5.

Conference Proceedings
Conference Proceedings
5. The Nature of the Shallow Boron Acceptor in SiC - Localization versus Effective Mass Theory
Gerstmann, U. ; Gali, A. ; Deak, P. ; Frauenheim, Th. ; Overhof, H.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.711-714,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Conference Proceedings
Conference Proceedings
6. Ab Initio Calculation of Shallow Defects: Results for P-Related Donors in SiC
Gerstmann, U. ; Rauls, E. ; Overhof, H. ; Frauenheim, T.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.501-506,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
7.

Conference Proceedings
Conference Proceedings
7. Nitrogen-Vacancy Complexes in SiC ? Final Annealing Products of the Silicon Vacancy?
Gerstmann, U. ; Rauls, E. ; Frauenheim, Th. ; Overhof, H.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.481-486,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
8.

Conference Proceedings
Conference Proceedings
8. Transport in Amorphous Semiconductors
Thomas, P. ; Overhof, H.
Pub. info.: Properties and applications of amorphous materials.  pp.261-290,  2001.  Dordrecht.  Kluwer Academic Publishers
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 9