1.

Conference Proceedings
Conference Proceedings
1. Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC
Dahlquist,F. ; Zetterling,C.-M. ; Ostling,M. ; Rottner,K.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1061-1064,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. Reverse Recovery and Avalanche Injection in High Voltage SiC PIN Diodes
Domeij,M. ; Breitholtz,B. ; Linnros,J. ; Ostling,M.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1041-1044,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures
Zetterling,C.-M. ; Ostling,M. ; Harris,C.I. ; Nordell,N. ; Wongchotigul,K. ; Spencer,M.G.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.877-880,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268