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Conference Proceedings

1. DEGRADATION OF PHOTOLUMINESCENCE EFFICIENCY IN GaAs UNDER LOW INTENSITY LASER IRRADIATION

Raja M. Yasin A. ; Brueck, Steven R.J. ; Osinski, Marek ; McInerney John G.

Pub. info.:	Advanced surface processes for optoelectronics : symposium held April 5-8, 1988, Reno, Nevada, U.S.A.. pp.265-270, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	126

Conference Proceedings

2. Role of Nanopipes in Degradation of AlGaN/InGaN/GaN Devices Operating at High Voltage

Osinski, Marek ; Lee, Jinhyun ; Barton, Daniel L.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.205-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

3. Electrical Properties of Nichia AlGaN/InGaN/GaN Blue LEDs in a Wide Current/Tenperature Range

Zeller, Joachim ; Eliseev, Petr G. ; Sartori, Philippe ; Perlin, Piotr ; Osinski, Marek

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.937-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

Conference Proceedings

4. Analysis of Radiative Recombination and Optical Gain in Gallium Nitride-Based Heterostructures

Eliseev, Petr G. ; Smagley, Vladimir A. ; Osinski, Marek

Pub. info.:	Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A.. pp.419-, 1996. Pittsburgh, Penn. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	421

Conference Proceedings

5. Room-Temperature Life Test of Nichia AlGaN/InGaN/GaN Blue Light Emitting Diodes

Osinski, Marek ; Helms, Christopher J. ; Berg, Niel ; Barton, Daniel L. ; Phillips, B. Scott

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.931-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

Conference Proceedings

6. Introduction of Ions Into Wide Bandgap Semiconductors

Maruska, H. Paul ; Lioubtchenko, Mike ; Tetreault, Thomas G. ; Osinski, Marek ; Pearton, Stephen J. ; Schurman, Matthew ; Vaudo, Robert ; Sakai, Shiro ; Chen, Qisheng ; Shul, Randy J.

Pub. info.:	Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.333-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	483

Conference Proceedings

7. Degradation of Single-Quantum-Well InGaN Green Light Emitting Diodes Under High Electrical Stress

Osinski, Marek ; Perlin, Piotr ; Eliseev, Petr G. ; Liu, Gungtan ; Barton, Daniel L.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.1179-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

8. MOCVD Growth and Characterization of GaInNAs/GaAs/InGaAs/GaAs Quantum Well Structures

El-Emawy, Abdel-Rahman A. ; Cao, Hongjun ; Nuntawong, Noppadon ; Liu, Chiyu ; Osinski, Marek

Pub. info.:	Progress in semiconductors II : electronic and optoelectronic applications : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A.. pp.469-474, 2003. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	744

Conference Proceedings

9. MOCVD Growth and Characterization of InNAs/GaAs Quantum Wells

El-Emawy, Abdel-Rahman A. ; Nuntawong, Noppadon ; Cao, Hongjun ; Liu, Chiyu ; Xu, Huifang ; Osinski, Marek

Pub. info.:	Progress in semiconductors II : electronic and optoelectronic applications : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A.. pp.507-512, 2003. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	744

10.

Conference Proceedings

10. Optical and Electrical Characteristics of Single-Quantum-Well InGaN Light-Emitting Diodes

Perlin, Piotr ; Osinski, Marek ; Eliseev, Petr G.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.1173-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

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