1.

Conference Proceedings
Conference Proceedings
1. Masking Process for High-Energy and High-Temperature Ion Implantation
Ohyanagi, T. ; Onose, H. ; Watanabe, A. ; Someya, T. ; Ohno, T. ; Amemiya, K. ; Kobayashi, Y.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.867-870,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. 2 kV 4H-SiC Junction FETs
Onose, H. ; Watanabe, A. ; Someya, T. ; Kobayashi, Y.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1227-1230,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Masking Process for High-Energy and High-Temperature Ion Implantation
Ohyanagi, T. ; Onose, H. ; Watanabe, A. ; Someya, T. ; Ohno, T. ; Amemiya, K. ; Kobayashi, Y.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.867-870,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. 2 kV 4H-SiC Junction FETs
Onose, H. ; Watanabe, A. ; Someya, T. ; Kobayashi, Y.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1227-1230,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393