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43 results

Conference Proceedings

1. ROOM TEMPERATURE PHOTORESIST REMOVAL PROCESS BY USING KF/H2O2/H2O

Omae, S. ; Jizaimaru, T. ; Ojima, S. ; Ohmi, T.

Pub. info.:	Proceedings of the Fifth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing. pp.488-495, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-35

Conference Proceedings

2. The Removal Efficiency of Copper Impurity on Various Silicon Surfaces

Sekine, K. ; Choi, G.-M. ; Morita, H. ; Ohmi, T.

Pub. info.:	ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology. pp.211-220, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-3

Conference Proceedings

3. The Dependence of Cu Removal Efficiency on the Initial Cu Concentration of Si Surface

Kim, J.-S. ; Morita, H. ; Joo, J.-D. ; Ohmi, T.

Pub. info.:	ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology. pp.199-210, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-3

Conference Proceedings

4. High Integrity Direct Oxidation/Nitridation at Low Temperatures Using Radicals

Ohmi, T. ; Sugawa, S. ; Hirayama, M.

Pub. info.:	Silicon Nitride and Silicon Dioxide Thin Insulating Films : proceedings of the sixth International Symposium. pp.241-252, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-7

Conference Proceedings

5. PASSIVATION OF Cu PARTICLES ON Si SUBSTRATE BY FOM(HF+O3- UPW) SOLUTION

Morita, H. ; Joo, J.-D. ; Messoussi, R. ; Kawada, K. ; Kim, J.-S. ; Ohmi, T.

Pub. info.:	Proceedings of the Fifth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing. pp.143-150, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-35

Conference Proceedings

6. THE EFFECT OF SURFACE DAMAGE DUE TO Si INPLANTATION ON ADSORPTION AND DESORPTION OF Cu ON Si SURFACE -

Kim, J.-S. ; Morita, H. ; Joo, J.-D. ; Ohmi, T.

Pub. info.:	Proceedings of the Fifth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing. pp.151-158, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-35

Conference Proceedings

7. PARTICLE AND METALLIC IMPURITIES REMOVAL BY USING NEW SPIN CLEANER BASED ON UCT CLEANING CONCEPT

Kwada, K. ; Nakamori, M. ; Morita, H. ; Okano, S. ; Nitta, T. ; Ohmi, T.

Pub. info.:	Proceedings of the Fifth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing. pp.528-535, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-35

Conference Proceedings

8. Studies of Moisture Adsorption on Various Kinds of Solid Surfaces Using Anhydrous Hydrogen Fluoride

Izumi, H. ; Nakagawa, Y. ; Miyoshi, S. ; Ohmi, T.

Pub. info.:	Proceedings of the Seventh International Symposium on Oxide Films on Metals and Alloys. pp.246-255, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-25

Conference Proceedings

9. Redidual End-of-Range Damage Reduction in Low-Temperature-Annealed Ion-Implanted Junctions by Using Low-Doped Silicon Substrate

Tamai, Y. ; Oka, M.M. ; Nakada, A. ; Shibata, T. ; Ohmi, T.

Pub. info.:	ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology. pp.643-654, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-3

10.

Conference Proceedings

10. Improvement of Gate Oxide Integrity by Preparing Atomic Order Flattened Si (100) Surface

Nakamura, O. ; Ohkawa, T. ; Ohmi, T.

Pub. info.:	The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000. pp.101-112, 2000. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-2

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