1.

Conference Proceedings
Conference Proceedings
1. 36 Ultrathin plasma nitrided oxide gate dielectrics for sub-100 nm generation CMOS technology
Jioon, J. ; Yeh, P. ; En, B. ; Wieczorek, K. ; Graetscl, F ; Bernard, J. ; Kim, H.S. ; Ihok, F. ; Olsen, C. ; Zhao, R. ; Ogle, B.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.287-292,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-14
2.

Conference Proceedings
Conference Proceedings
2. Organic Contamination on Si Wafers in Fab Environments and its Effects on Gate Oxide Integrity
Jeon, J. ; Watanabe, S. ; Tanishima, M. ; Sugimoto, F. ; Ogle, B.
Pub. info.: Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium.  pp.250-259,  1999.  Pennington, New Jersey.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-6
3.

Conference Proceedings
Conference Proceedings
3. Preparation of Sub 20A Thick Ultra-Thin Stack Gate Dielectrics by In-situ RTCVD Processes
Jean, J.S. ; Wong, C. ; Gray, J. ; Kim, H. ; Ogle, B.
Pub. info.: Rapid thermal and other short-time processing technologies II : proceedings of the international symposium.  pp.183-188,  2001.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-9
4.

Conference Proceedings
Conference Proceedings
4. 56. Performance of nitrided Hf-silicate high-k gate dielectrics
Jeon, J. ; Arasnia, Q.Xiang; F. ; Zhong, J. ; Goo, J.S. ; Halliyol, A. ; Kim, H.S. ; Clark-Phelps, B. ; Zhong, H. ; Ogle, B.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.451-458,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-14
5.

Conference Proceedings
Conference Proceedings
5. Electrical Characteristics of Ultra Thin (2.5 nm) Gate Quality LPCVD Nitride/Oxide Films
Ibok, E. ; Ahmed, K. ; Ogle, B.
Pub. info.: ULSI process integration : proceedings of the first international symposium.  pp.181-192,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-18
6.

Conference Proceedings
Conference Proceedings
6. CHARACTERIZATION OF HF-LAST CLEANED Si FOR GATE OXIDES
Jeon, J.S. ; Glick, J.S. ; Jafarpour, A. ; Ogle, B.
Pub. info.: Proceedings of the Fifth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.195-206,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-35
7.

Conference Proceedings
Conference Proceedings
7. 50 Characterization of the Effect of High-k Process Conditions on the Performance of Flash Memory by a DOE Method
Jean, J. ; Shiraiwa, H. ; Orimoto, T. ; Zheng, W. ; Suh, Y. ; Ding, M. ; Chan, S. ; Sachar, H. ; Torii, S. ; Xue, L. ; Randolph, M. ; Ogle, B. ; Raisanen, P.
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.411-417,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
8.

Conference Proceedings
Conference Proceedings
8. Hf Cross-Contamination in RTCVD System and its Effect on Gate Oxide Lntegnty
Jean, J. ; Vermeire, B. ; Parks, H. ; Raghavan, S. ; Ogle, B.
Pub. info.: Rapid thermal and other short-time processing technologies III : proceedings of the international symposium.  pp.215-222,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-11
9.

Conference Proceedings
Conference Proceedings
9. Material, Fractural and Optical Properties of PECVD Silicon Nitride and Oxvnitride Films
Ibok, F. ; Garg, S. ; Ogle, B.
Pub. info.: Proceedings of the Thirteenth International Symposium on Chemical Vapor Deposition.  pp.470-477,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-5