1.

Conference Proceedings
Conference Proceedings
1. RF Characteristics of a Fully Ion-Implanted MESFET on a Bulk Semi-Insulating 4H-SiC Substrate
Ogata, M. ; Katakami, S. ; Ono, S. ; Arai, M.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1235-1238,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Fine/High Aspect Ratio of SiO2 Hole and Gap Etching
Horiike, Y. ; Ogata, M. ; Oshio, H. ; Chinzei, Y. ; Feurprier, Y. ; Takamura, Y. ; Ichiki, T.
Pub. info.: ULSI process integration : proceedings of the first international symposium.  pp.329-344,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-18
3.

Conference Proceedings
Conference Proceedings
3. Influence of Gate Finger Width on RF Characteristics of 4H-SiC MESFET
Arai, M. ; Honda, H. ; Ogata, M. ; Sawazaki, H. ; Ono, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1379-1382,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Source Resistance Analysis of SiC-MESFET
Arai, M. ; Ogata, M. ; Honda, H. ; Sawazaki, H. ; Nakagawa, A. ; Kitamura, M.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.711-714,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
5.

Conference Proceedings
Conference Proceedings
5. RF Characteristics of Short-Channel SiC MESFETs
Honda, H. ; Ogata, M. ; Sawazaki, H. ; Ono, S. ; Arai, M.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.745-748,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
6.

Conference Proceedings
Conference Proceedings
6. Influence of Gate Finger Width on RF Characteristics of 4H-SiC MESFET
Arai, M. ; Honda, H. ; Ogata, M. ; Sawazaki, H. ; Ono, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1379-1382,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Design of Epoxy Encapsulating Compounds for Highly Reliable Surface Mounting Semiconductor Devices
Ishii, Toshiaki ; Moteki, R. ; Nagai, A. ; Eguchi, S. ; Ogata, M.
Pub. info.: Electronic packaging materials science VIII : symposium held April 17-20, 1995, San Francisco, California, U.S.A..  pp.71-,  1995.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 390
8.

Technical Paper
Technical Paper
8. Development of a second generation dry low NOx combustor for 1.5MW gas turbine
Kitajima, J. ; Kimura, T. ; Sasaki, T. ; Okuto, A. ; Kajita, S. ; Ohga, S. ; Ogata, M.
Pub. info.: A.S.M.E. paper.  1995.  New York.  The American Society of Mechanical Engineers
Title of ser.: ASME Technical Paper : GT
Ser. no.: 1995
9.

Technical Paper
Technical Paper
9. Discussion on the Progress and Future of Satellite Communication (Japan)
Ogata, M. ; Mizusawa, H. ; Irie, K.
Pub. info.: NASA Technical Reports.  (NASA-TM-77672),  pp.1-20,  1985.  National Aeronautics and Space Administration