1.

Conference Proceedings
Conference Proceedings
1. THE ENERGY POSITION OF THE EL2 GROUND STATE IN GaAs.
OMLING,P. ; SILVFRBERG,P. ; SAMUELSON,L.
Pub. info.: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part1  pp.329-334,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 10-12
2.

Conference Proceedings
Conference Proceedings
2. UNIAXIAL STRESS DLTS OF IRON-ACCEPTOR PAIRS IN SILICON.
NOLTE,D.D. ; HALLER,E.E. ; OMLING,P.
Pub. info.: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part2  pp.457-462,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 10-12