1.

Conference Proceedings
Conference Proceedings
1. Loading Effects during Non-Selective Epitaxial Growth of Si and SiGe
Peinejori, I. ; Zhang, S.-L. ; Grahn, J.V. ; OEstling, M.
Pub. info.: CVD XV, proceedings of the fifteenth International Symposium on Chemical Vapor Deposition.  pp.403-410,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-13
2.

Conference Proceedings
Conference Proceedings
2. Reduction of the Barrier Height and Enhancement of Tunneling Current of Titanium Contacts Using Embedded Au Nano-Particles on 4H and 6H Silicon Carbide
Lee, S.-K. ; Zetterling, C.-M. ; OEstling, M. ; Fusegawa, I. ; Magnusson, M.H. ; Deppert, K. ; Wernersson, L.-E. ; Samuelson, L. ; Litwin, A.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.937-940,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors
Danielsson, E. ; Zetterling, C.-M. ; OEstling, M. ; Forsberg, U. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1337-1340,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. A JBS Diode with Controlled Forward Temperature Coefficient and Surge Current Capability
Dahlquist, F. ; Lendenmann, H. ; OEstling, M.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1129-1132,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors
Koo, S.-M. ; Lee, S.-K. ; Zetterling, C.-M. ; OEstling, M. ; Forsberg, U. ; Janzen, E.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1235-1238,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393