1.

Conference Proceedings
Conference Proceedings
1. A Novel Concept for Contact Etch Residue Removal
I.J. Vos ; D. Hellin ; S. Demuynck ; O. Richard ; T. Conard
Pub. info.: Cleaning and surface conditioning technology in semiconductor device manufacturing 10.  pp.403-407,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(2)
2.

Conference Proceedings
Conference Proceedings
2. NI (PT) SI Thermal Stability Improvement by Carbon Implantation
S. Mertens ; T.Y. Hoffmann ; C. Vrancken ; S. Jakschik ; O. Richard
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment.  pp.397-404,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 13(1)
3.

Conference Proceedings
Conference Proceedings
3. Threshold Voltage Control in PMOSFETs with Polysilicon or Fully-Silicided Gates on Hf-Based Gate Dielectric Using Controlled Lateral Oxidation
V. S. Kaushik ; K. Rohr ; S. Hyun ; S. De Gendt ; S. Van Elshocht ; A. Debbie ; J. Everoert ; A. Veboso ; S. Brus ; L. Ragnarason ; O. Richard ; M. Caymax ; M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.305-312,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
4.

Conference Proceedings
Conference Proceedings
4. Alternative Gate Dielectric Materials
S. Van Elshocht ; A. Hardy ; S. De Gendt ; C. Adelmann ; P. K. Baumann ; D. P. Brunco ; M. R. Caymax ; F. Conard ; P. Delugas ; P. Lehnen ; O. Richard ; E. Rohr ; D. Shamiryan ; A. Vos ; F. Witters ; P. Zimmerman ; M. K. Van Bael ; J. Mullens ; M. M. Meuris ; M. M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.479-498,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
5.

Conference Proceedings
Conference Proceedings
5. Relaxation-Induced Excess Leakage Current in Recessed Si₁₋xGex Source/Drain Junctions
M. B. Gonzalez ; M. Chowdhury ; N. Bhouri ; P. Verheyen ; F. Leys ; O. Richard ; R. Loo ; C. Claeys ; B. Simoen ; V. Machkaoutsan ; P. Tomasini ; S. Thomas ; J. Lu ; J. Weijtmans ; R. Wise
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.389-396,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)
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Conference Proceedings
Conference Proceedings
6. Study of Ni-Silicide Contacts to Si:C Source/Drain.
S. Mertens ; Y. Cho ; F. Nouri ; R. Schreutelkamp ; Y. Kim ; P. Verheyen ; J. Steenbergen ; C. Vrancken ; H. Bender ; O. Richard ; B. Van Daele ; W. Vandervorst ; P. Absil ; S. Kubicek ; C. Demeurisse ; Z. Tokei ; A. Lauwers ; L. Geenen
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment.  pp.139-148,  2006.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(2)
7.

Conference Proceedings
Conference Proceedings
7. Rare-Earth Metal Scandate High-k Layers
C. Zhao ; T. Heeg ; M. Wagner ; J. Schubert ; S. Witters ; B. Brijs ; H. Bender ; O. Richard ; V. Afanas'ev ; M. Houssa ; M. Caymasx ; S. De Gendt
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.161-176,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)