Analysis of PD AOI pMOSFET Device Performance Enhancement due to Direct-Tunneling Current in the Partial n+ Poly Gate
- Author(s):
G. Guegan J. Pretet R. Gwoziecki O. Gonnard G. Gouget P. Touret C. Raynaud S. Deleonibus - Publication title:
- Silicon-on-insulator technology and devices 13
- Title of ser.:
- ECS transactions
- Ser. no.:
- 6(4)
- Pub. Year:
- 2007
- Page(from):
- 165
- Page(to):
- 172
- Pages:
- 8
- Pub. info.:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566775533 [1566775531]
- Language:
- English
- Call no.:
- E23400/6-4
- Type:
- Conference Proceedings
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