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13 results

Conference Proceedings

1. Influence of the Annealing Ambient on Structural and Optical Properties of Rare Earth Implanted GaN

Lorenz, K. ; Nogales, E. ; Nedelec, R. ; Penner, J. ; Vianden, R. ; Alves, E. ; Martin, R. W. ; O'Donnell, K. P.

Pub. info.:	GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A.. pp.611-618, 2006. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	892

Conference Proceedings

2. A Microspectroscopic Study of Cap Damage in Annealed RE-Doped AlN-Capped GaN

Nogales, E. ; Lorenz, K. ; Wang, K. ; Roqan, I. S. ; Martin, R. W. ; O'Donnell, K. P. ; Alves, E. ; Ruffenach, S. ; Briot, O.

Pub. info.:	GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A.. pp.625-630, 2006. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	892

Conference Proceedings

3. Comparative study of structural properties and photoluminescence in InGaN layers with a high in content

Vantomme, A. ; Wu, M. F. ; Hogg, S. ; Langouche, G. ; Jacobs, K. ; Moerman, I. ; White, M. E. ; O'Donnell, K. P. ; Nistor, L. ; Landuyt, J. Van ; Bender, H.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W11.38.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

4. Hexagonal Growth Hillocks in GaN Epilayers

Middleton, P. G. ; Trager-Cowan, C. ; Mohammed, A. ; O'Donnell, K. P. ; Stricht, W. Van Der ; Moerman, I. ; Demeester, P.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.471-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

5. Optical spectroscopy and composition of InGaN

O'Donnell, K. P. ; Martin, R. W. ; White, M. E. ; Jacobs, K. ; Stricht, W. Van der ; Demeester, P. ; Vantomme, A. ; Wu, M. F. ; Mosselmans, J. F. W.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W11.26.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

6. Probing the Indium Mole Fraction in an InGaN Epilayer by Depth-Resolved Cathodoluminescence

Trager-Cowan, C. ; Middleton, P. G. ; Mohammed, A. ; O'Donnell, K. P. ; Stricht, W. Van der ; Moerman, I. ; Demeester, P.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.715-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

7. The Effect of a GaN Nucleation Layer on GaN Film Properties Grown by Metalorganic Chemical Vapor Deposition

Stricht, W. Van der ; Moerman, I. ; Demeester, P. ; Crawley, J. A. ; Thrush, E. J. ; Middleton, P. G. ; Trager-Cowan, C. ; O'Donnell, K. P.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.231-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

Conference Proceedings

8. X-ray Excited Optical Luminescence studies of InGaN and rare-earth doped GaN epilayers

Katchkanov, V. ; Mosselmans, J. F. W. ; O'Donnell, K. P. ; Poolton, N. R. J. ; Hernandez, S.

Pub. info.:	GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.. pp.209-214, 2005. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	831

Conference Proceedings

9. Dependence of the E2 and A1(LO) Modes on InN Fraction in InGaN Epilayers

Hernandez, S. ; Cusco, R. ; Artus, L. ; O'Donnell, K. P. ; Martin, R. W. ; Watson, I. M. ; Nanishi, Y. ; Kurouchi, M. ; Van-der-Stricht, W.

Pub. info.:	GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.. pp.179-184, 2005. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	831

10.

Conference Proceedings

10. Extended X-Ray Absorption Fine Structure Studies of InGaN Epilayers

Katchkanov, V. ; O'Donnell, K. P. ; Mosselmans, J. F. W. ; Hernandez, S. ; Martin, R. W. ; Nanishi, Y. ; Kurouchi, M. ; Watson, I. ; Van-der-Stricht, W. ; Calleja, E.

Pub. info.:	GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.. pp.203-208, 2005. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	831

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