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9 results

1.

Conference Proceedings

1. Chemical Structures of Oxynitride/Si(100) Interface

Takahashi, K. ; Nohira, H. ; Kato, H. ; Tamura, N. ; Hikazutani, K. ; Sano, S. ; Hattori, T.

Pub. info.:	The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000. pp.181-186, 2000. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-2

2.

Conference Proceedings

2. Characterization of Oxide Films on SiC Epitaxial (0001) Faces by Angle-Resolved Photoemission Spectroscopy Measurements Using Synchrotron Radiation

Hijikata, Y. ; Yaguchi, H. ; Yoshida, S. ; Takata, Y. ; Kobayashi, K. ; Shin, S. ; Nohira, H. ; Hattori, T.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.585-588, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

3.

Conference Proceedings

3. INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION

Tsai, W. ; Chen, I. ; Carter, R. ; Cartier, E. ; Kluth, J. ; Richard, O. ; Claes, M. ; Lin, Y.M. ; Nohira, H. ; Conard, T. ; Caymax, M. ; Young, E. ; Vandervorst, W. ; DeGendt, S. ; Heyns, M. ; Manabe, Y. ; Maes, J.W. ; Rittersma, Z.M. ; Besling, W. ; Roozeboom, F.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.747-760, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

4.

Conference Proceedings

4. Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces

Hijikata, Y. ; Yaguchi, H. ; Yoshida, S. ; Takata, Y. ; Kobayashi, K. ; Nohira, H. ; Hattori T.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1003-1006, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

5.

Conference Proceedings

5. Surface Morphology of Ultrathin Oxide Formed on Si(100)

Hattori, T. ; Fujimura, M. ; Nohira, H.

Pub. info.:	Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.. pp.163-, 1999. Warrendale, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	567

6.

Conference Proceedings

6. Detection of interfaces states correlated with layer-by-layer oxidation on Si(100)

Hattori, T. ; Nohira, H. ; Teramoto, Y. ; Watanabe, N.

Pub. info.:	Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A.. pp.33-, 2000. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	592

7.

Conference Proceedings

7. INITIAL STAGE OF SiO2/Si INTERFACE FORMATION ON HYDROGEN-TERMINATED SILICON SURFACES

Hattori, T. ; Nohira, H. ; Ohishi, K. ; Shimizu, Y. ; Tamura, Y.

Pub. info.:	Surface chemical cleaning and passivation for semiconductor processing. pp.387-, 1993. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	315

8.

Conference Proceedings

8. Angle-Resolved Photoelectron Spectroscopy Study on Gate Insulators

Nohira, H. ; Tamura, N. ; Ushio, J. ; Hattori, T.

Pub. info.:	Silicon nitride, silicon dioxide thin insulating films, and other emerging dieletrics VIII : proceedings of the international symposium. pp.19-32, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-01

9.

Conference Proceedings

9. INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION

Tsai, W. ; Chen, I. ; Carter, R. ; Cartier, E. ; Kluth, J. ; Richard, O. ; Claes, M. ; Lin, Y.M. ; Nohira, H. ; Conard, T. ; Caymax, M. ; Young, E. ; Vandervorst, W. ; DeGendt, S. ; Heyns, M. ; Manabe, Y. ; Maes, J.W. ; Rittersma, Z.M. ; Besling, W. ; Roozeboom, F.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.747-760, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

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