1.

Conference Proceedings
Conference Proceedings
1. Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties
Ota, C. ; Nishio, J. ; Hatakeyama, T. ; Shinohe, T. ; Kojima, K. ; Nishizawa, S. ; Ohashi, H.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1175-1178,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Optimization of a SiC Super-SBD Based on Scaling Properties of Power Devices
Hatakeyama, T. ; Ota, C. ; Nishio, J. ; Shinohe, T.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1179-1182,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure
Nishio, J. ; Ota, C. ; Shinohe, T. ; Kojima, K. ; Okumura, H.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.147-150,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
4.

Conference Proceedings
Conference Proceedings
4. Replication of Defects from 4H-SiC Wafer to Epitaxial Layer
Ohno, T. ; Yamaguchi, H. ; Kojima, K. ; Nishio, J. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Yoshida, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.447-450,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)
Hatakeyama, T. ; Nishio, J. ; Shinohe, T.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.921-924,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
6.

Conference Proceedings
Conference Proceedings
6. Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11-20) Face
Kojima, K. ; Ohno, T. ; Fujimoto, T. ; Katsuno, M. ; Ohtani, N. ; Nishio, J. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.925-928,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
7.

Conference Proceedings
Conference Proceedings
7. Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor
Hasegawa, M. ; Miyauchi, A. ; Masahara, K. ; Ishida, Y. ; Takahashi, T. ; Ohno, T. ; Nishio, J. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.227-230,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
Nishio, J. ; Kushibe, M. ; Masahara, K. ; Kojima, K. ; Ohno, T. ; Ishida, Y. ; Takahashi, T. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.215-218,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
9.

Conference Proceedings
Conference Proceedings
9. SiC Device Limitation Breakthrough with Novel Floating Junction Structure on 4H-SiC
Adachi, K. ; Omura, I. ; Ono, R. ; Nishio, J. ; Shinohe, T. ; Ohashi, H. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.887-890,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
10.

Conference Proceedings
Conference Proceedings
10. High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor
Masahara, K. ; Takahashi, T. ; Kushibe, M. ; Ohno, T. ; Nishio, J. ; Kojima, K. ; Ishida, Y. ; Suzuki, T. ; Tanaka, T. ; Yoshida, S. ; Arai, K.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.179-182,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393