1.

Conference Proceedings
Conference Proceedings
1. Text-indicated speaker verification method using PSI-CELP parameters
Mogaki,T. ; Komatsu,N. ; Nishikawa,H.
Pub. info.: Security and watermarking of multimedia contents : 25-27 January 1999, San Jose, California.  pp.184-193,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3657
2.

Conference Proceedings
Conference Proceedings
2. Room Temperature Defect Etching of III-V Compounds and AIloys Grown on Si Substrate Using Hydrogen Fluoride and Nitric Acid
Nishikawa,H. ; Soga,T. ; Jimbo,T. ; Umeno,M.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1923-1926,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
3.

Conference Proceedings
Conference Proceedings
3. High Quality GaAs on Si Grown by CBE
Uchida,H. ; Adachi,M. ; Egawa,T. ; Nishikawa,H. ; Jimbo,T. ; Umeno,M.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.535-538,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
4.

Conference Proceedings
Conference Proceedings
4. Photoluminescence Study on Point Defects in SIMOX Buried SiO2 Film
Seol,K.S. ; Ieki,A. ; Ohki,Y. ; Nishikawa,H. ; Tachimori,M.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1909-1914,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
5.

Conference Proceedings
Conference Proceedings
5. Photoluminescence and Electron-Spin-Resonance Studies of Defects in Ion-Implanted Thermal SiO2 Films
Nishikawa,H. ; Fukui,H. ; Watanabe,E. ; Ito,D. ; Takiyama,M. ; Ieki,A. ; Ohki,Y.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.97-101,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201