1.

Conference Proceedings
Conference Proceedings
1. Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds
Furusho, T. ; Kobayashi, R. ; Nishiguchi, T. ; Sasaki, M. ; Hirai, K. ; Hayashi, T. ; Kinoshita, H. ; Shiomi, H.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.35-38,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8
Sasaki, M. ; Hirai, A. ; Miyanagi, T. ; Furusho, T. ; Nishiguchi, T. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.407-410,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Observation of 2in SiC Wafer by SWBXT at SPring-8
Sasaki, M. ; Hirai, A. ; Miyanagi, T. ; Furusho, T. ; Nishiguchi, T. ; Shiomi, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.411-414,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Sublimation Growth of 6H-SiC Boule on Various a-Plane Substrates
Nishino, S. ; Nishiguchi, T. ; Masuda, Y. ; Sasaki, M. ; Ohshima, S.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
5.

Conference Proceedings
Conference Proceedings
5. Epitaxial Growth of 3C-SiC on T-Shape Columnar Si Substrates
Nishino, S. ; Shoji, A. ; Nishiguchi, T. ; Ohshima, S.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.65-70,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
6.

Conference Proceedings
Conference Proceedings
6. Crystal Growth of 15R-SiC Boules by Sublimation Method
Nishiguchi, T. ; Okada, S. ; Sasaki, M. ; Harima, H. ; Nishino, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.115-118,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
7.

Conference Proceedings
Conference Proceedings
7. Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method
Okada, S. ; Nishiguchi, T. ; Shimizu, T. ; Sasaki, M. ; Oshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.51-54,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
8.

Conference Proceedings
Conference Proceedings
8. Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate
Nakamura, M. ; Isshiki, T. ; Nishiguchi, T. ; Nishio, K. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.181-184,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
9.

Conference Proceedings
Conference Proceedings
9. Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method
Isshiki, T. ; Nakamura, M. ; Nishiguchi, T. ; Nishio, K. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.185-188,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
10.

Conference Proceedings
Conference Proceedings
10. Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD Method
Sugishita, S. ; Shoji, A. ; Mukai, Y. ; Nishiguchi, T. ; Michikami, K. ; Issiki, T. ; Ohshima, S. ; Nishino, S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.177-180,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485