1.

Conference Proceedings
Conference Proceedings
1. Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor
Wischmeyer,F. ; Leidich,D. ; Niemann,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.127-130,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. Punch-Through Behaviour of Wide Bandgap Materials(with Example in 6H-SiC)and its Benefit to JFETs
Kaminski,N. ; Sheppard,S.T. ; Niemann,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1073-1076,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. High Temperature Performance of Implanted-Gate n-Channel JFETs in 6H-SiC
Sheppard,S.T. ; Lauer,V. ; Wondrak,W. ; Niemann,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1077-1080,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
4.

Conference Proceedings
Conference Proceedings
4. SiC Merged p-n/Schottky Rectifiers for High Voltage Applications
Held,R. ; Kaminski,N. ; Niemann,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1057-1060,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
5.

Conference Proceedings
Conference Proceedings
5. Formation and Preveution of Micropipes and Voids in CVD Carbonization Experiments on(100)Silicon
Scholz,R. ; Gosele,U. ; Wischmeyer,F. ; Niemann,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.219-222,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268