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28 results

Conference Proceedings

1. Si Acceptors and their Passivation by Hydrogen in p-type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs

Ashwin,M.J. ; Addinall,R. ; Fahy,M.R. ; Newman,R.C. ; Silier,I. ; Bauser,E.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.265-270, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

2. Infrared and Raman Studies of Carbon Impurities in Highly Doped MBE AlAs:C

Davidson,B.R. ; Newman,R.C. ; Pritchard,R.E. ; Robbie,D.A. ; Sangster,M.J.L. ; Wagner,J. ; Fischer,A. ; Ploog,K.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.247-252, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

3. Incorporation of Silicon in(311)A and(111)A GaAs Grown by Molecular Beam Epitaxy

Wagner,J. ; Ramsteiner,M. ; Ashwin,M.J. ; Fahy,M.R. ; Newman,R.C. ; Braun,W. ; Ploog,K.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.259-264, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

4. The Assignment of the 78/2O3meV Double Acceptor in GaAs to BAS Impurity Antisite Centers

Newman,R.C. ; Davidson,B.R. ; Addinall,R. ; Murray,R. ; Emmert,J.W. ; Wagner,J. ; Gotz,W. ; Roos,G. ; Pensl,G.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.1 pp.229-234, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

5. Raman Spectroscopic Study of Si Local Vibrational Modes in GaAs

Wagner,J. ; Ramsteiner,M. ; Murray,R. ; Newman,R.C.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part2 pp.815-820, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

6. Recent developments and theory relating to impurity induced LVM:s in GaP and GaAs.(Invited)

Newman,R.C. ; Grosche,E.G. ; Ashwin,M.J. ; Davidson,B.R. ; Robbie,D.A. ; Leigh,R.S. ; Sangster,M.J.L.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.1-10, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

7. The Use of Pitting Transients to Test Microscopic Models of Localized Corrosion

Laycock,N.J. ; Newman,R.C.

Pub. info.:	Electrochemical methods in corrosion research V : proceedings of the 5th International Symposium, held in Sesimbra, Portugal, September 5-8, 1994. Part2 pp.649-662, 1995. Aedemannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	192-194

Conference Proceedings

8. Ga vacancies as compensating centers in homogeneously or ｦﾄ-doped GaAs(Si)layers

Laine,T. ; Saarinen,K. ; Hautojarvi,P. ; Corbel,C. ; Pfeiffer,L.N. ; Citrin,P.H. ; Ashwin,M.J. ; Newman,R.C.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.879-884, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

9. Measurements of the diffusion coefficient of hydrogen in silicon monitored by catalyzed enhanced oxygen diffusion jumps

Newman,R.C. ; Tucker,J.H. ; McQuaid,S.A.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.87-92, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

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Conference Proceedings

10. Localised vibrational mode absorption of silicon donors and beryllium acceptors in MBE GaAs,InAs and InSb

Addinall,R. ; Newman,R.C. ; Ferguson,I.T. ; Mohades-Kassai,A. ; Brozel,M.R. ; Sharma,V.K.M. ; McPhail,D. ; Sangster,M.J.L.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.2 pp.1027-1032, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

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