1.

Conference Proceedings
Conference Proceedings
1. Growth and characterization of GaN thin films on Si(111) substrates using SiC intermediate layer
Lim, K. Y. ; Lee, K. J. ; Park, C. I. ; Kim, K. C. ; Choi, S. C. ; Lee, W-H. ; Suh, E-K. ; Yang, G. M. ; Nahm, K. S.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W3.24.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
2.

Conference Proceedings
Conference Proceedings
2. The Effect of Buffer Layers in MOCVD Growth of GaN Film on 3C-SiC/Si Substrate
Park, C. I. ; Kang, J. H. ; Kim, K. C. ; Lim, K. Y. ; Suh, E.-K. ; Nahm, K. S.
Pub. info.: GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 639
3.

Conference Proceedings
Conference Proceedings
3. Correlation between Optical and Structural Properties of Thick GaN Films Grown by Direct Reaction of Ga and NH3
Nahm, K. S. ; Yang, S. H. ; Ahn, S. H. ; Suh, E. -K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1553-1556,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
4.

Conference Proceedings
Conference Proceedings
4. The Growth and Characterization of 3C-SiC/SiNx/Si Structure
Kim, K. C. ; Park, C. I. ; Nahm, K. S. ; Suh, E. -K.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.317-320,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)